IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [2000 TO 2024]
Subject:  Electronic, Optical and Magnetic Materials
Date Issued:  [2010 TO 2019]

Results 1-20 of 51 (Search time: 0.007 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Ghobadi, Nayereh ; Pourfath, Mahdi A Comparative Study of Tunneling FETs Based on Graphene and GNR HeterostructuresArtikel Article2014
2Azar, Nima Sefidmooye ; Pourfath, Mahdi A Comprehensive Study of Transistors Based on Conductive Polymer Matrix CompositesArtikel Article 2015
3Djavid, Nima ; Khaliji, Kaveh ; Tabatabaei, Seyed Mohammad ; Pourfath, Mahdi A Computational Study on the Electronic Transport Properties of Ultra-Narrow Disordered Zigzag Graphene NanoribbonsArtikel Article2014
4Yazdanpanah, Arash ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried A Numerical Study of Line-Edge Roughness Scattering in Graphene NanoribbonsArtikel Article2012
5Goharrizi, Arash Yazdanpanah ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans ; Selberherr, Siegfried An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene NanoribbonsArtikel Article2011
6Rigato, Matteo ; Fleury, Clement ; Schwarz, Benedikt ; Mergens, Markus ; Bychikhin, Sergey ; Simburger, Werner ; Pogany, Dionyz Analysis of ESD Beheviour of Stacked nMOSFET RF Switches in Bulk TechnologyArtikel Article 2018
7Vasicek, Martin ; Cervenka, Johann ; Esseni, David ; Palestri, Pierpaolo ; Grasser, Tibor Applicability of Macroscopic Transport Models to Decananometer MOSFETsArtikel Article2012
8Gholipour, M. ; Masoumi, N. ; Chen, Y. C. ; Chen, D. ; Pourfath, Mahdi Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power DesignArtikel Article 2014
9Karamitaheri, Hossein ; Pourfath, Mahdi ; Faez, Rahim ; Kosina, Hans Atomistic Study of the Lattice Thermal Conductivity of Rough Graphene NanoribbonsArtikel Article2013
10Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsArtikel Article 2017
11Lagger, Peter ; Reiner, Maria ; Pogany, Dionyz ; Ostermaier, Clemens Comprehensive Study of the Complex Dynamics of Forward Bias-Induced Threshold Voltage Drifts in GaN Based MIS-HEMTs by Stress/Recovery ExperimentsArtikel Article 2014
12Stöber, Laura ; Konrath, J.P. ; Patocka, Florian ; Schneider, Michael ; Schmid, Ulrich Controlling 4H-SiC Schottky Barriers by Molybdenum and Molybdenum Nitride as Contact MaterialsArtikel Article Feb-2016
13Yazdanpanah Goharrizi, Arash ; Pourfath, Mahdi ; Fathipour, Morteza ; Kosina, Hans Device Performance of Graphene Nanoribbon Field-Effect Transistors in the Presence of Line-Edge RoughnessArtikel Article2012
14Koller, Christian ; Pobegen, Gregor ; Ostermaier, Clemens ; Pogany, Dionyz Effect of carbon doping on charging/discharging dynamics and leakage behavior of carbon-doped GaNArtikel Article 2018
15Simonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon CarbideArtikel Article 4-Jan-2018
16Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
17Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Nishi, Kenji ; Ranaweera, Jeewika ; Selberherr, Siegfried Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and MeasurementsArtikel Article2011
18Henkel, C. ; Abermann, S. ; Bethge, O. ; Pozzovivo, G. ; Klang, P. ; Reiche, M. ; Bertagnolli, E. Ge p-MOSFETs With Scaled ALD 𝙻𝚊₂𝙾₃/𝚉𝚛𝙾₂ Gate DielectricsArtikel Article Dec-2010
19Lorenz, J. ; Bär, E. ; Clees, T. ; Jancke, Roland ; Salzig, C. ; Selberherr, Siegfried Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: MethodologyArtikel Article 16-Jun-2011
20Lorenz, J. ; Bär, E. ; Clees, T. ; Evanschitzky, P. ; Jancke, Roland ; Kampen, C. ; Paschen, U. ; Salzig, C. ; Selberherr, Siegfried Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: ResultsArtikel Article 16-Jun-2011