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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Kaczer, B. ; Franco, J. ; Weckx, P. ; Roussel, Ph.J. ; Putcha, V. ; Bury, E. ; Simicic, M. ; Chasin, A. ; Linten, D. ; Parvais, B. ; Catthoor, F. ; Rzepa, G. ; Waltl, M. ; Grasser, T. | A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability | Artikel Article  | 2018 |
| 2 | | Wilhelmer, Christoph ; Waldhoer, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture | Artikel Article | 2022 |
| 3 | | Tyaginov, S. ; Starkov, I. ; Enichlmair, H. ; Jungemann, Ch. ; Park, J.M. ; Seebacher, E. ; Orio, R. ; Ceric, H. ; Grasser, T. | An Analytical Approach for Physical Modeling of Hot-Carrier Induced Degradation | Artikel Article | 2011 |
| 4 | | Franco, J. ; Graziano, S. ; Kaczer, B. ; Crupi, F. ; Ragnarsson, L.-Å. ; Grasser, T. ; Groeseneken, G. | BTI Reliability of Ultra-Thin EOT MOSFETs for Sub-Threshold Logic | Artikel Article | 2012 |
| 5 | | Camargo, V. V. A. ; Kaczer, Ben ; Grasser, Tibor ; Wirth, G. | Circuit Simulation of Workload-Dependent RTN and BTI Based on Trap Kinetics | Artikel Article | 2014 |
| 6 | | Sharma, P. ; Tyaginov, S. ; Wimmer, Y. ; Rudolf, F. ; Rupp, K. ; Enichlmair, H. ; Park, J.-M. ; Ceric, H. ; Grasser, T. | Comparison of Analytic Distribution Function Models for Hot-Carrier Degradation in nLDMOSFETs | Artikel Article | 2015 |
| 7 | | Holzer, Stefan ; Sheikholeslami, Alireza ; Karner, Markus ; Grasser, Tibor ; Selberherr, Siegfried | Comparison of Deposition Models for a TEOS LPCVD Process | Artikel Article | 2007 |
| 8 | | Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. | Comphy -- A Compact-Physics Framework for Unified Modeling of BTI | Artikel Article | 2018 |
| 9 | | Stathis, James H. ; Mahapatra, Souvik ; Grasser, Tibor | Controversial Issues in Negative Bias Temperature Instability | Artikel Article | 2018 |
| 10 | | Toledano-Luque, M. ; Kaczer, B. ; Franco, J. ; Roussel, Ph.J. ; Grasser, T. ; Groeseneken, G. | Defect-Centric Perspective of Time-Dependent BTI Variability | Artikel Article | 2012 |
| 11 | | Grasser, Tibor ; Selberherr, Siegfried | Editorial | Artikel Article | Jun-2007 |
| 12 | | Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M. ; Rzepa, G. ; Jech, M. ; Shluger, A.L. ; Grasser, T. | Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence | Artikel Article | 2018 |
| 13 | | Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor ; Nelhiebel, Michael | Impact of Gate Poly Doping and Oxide Thickness on the N- and PBTI in MOSFETs | Artikel Article | 2011 |
| 14 | | Tyaginov, Stanislav ; Sverdlov, Viktor ; Starkov, Ivan ; Gös, Wolfgang ; Grasser, Tibor | Impact of O-Si-O Bond Angle Fluctuations on the Si-O Bond-Breakage Rate | Artikel Article | 2009 |
| 15 | | Waltl, Michael ; Waldhoer, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor | Impact of Single-Defects on the Variability of CMOS Inverter Circuits | Artikel Article | 2021 |
| 16 |  | Waltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor | Impact of single-defects on the variability of CMOS inverter circuits | Article Artikel   | Nov-2021 |
| 17 | | Tyaginov, S. E. ; Starkov, Ivan ; Triebl, Oliver ; Cervenka, Johann ; Jungemann, C. ; Carniello, Sara ; Park, J.M. ; Enichlmair, H. ; Karner, Markus ; Kernstock, Christian ; Seebacher, E. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor | Interface Traps Density-of-States as a Vital Component for Hot-Carrier Degradation Modeling | Artikel Article | 2010 |
| 18 | | Rott, Gunnar Andreas ; Rott, Karina ; Reisinger, Hans ; Gustin, Wolfgang ; Grasser, Tibor | Mixture of Negative Bias Temperature Instability and Hot-Carrier Driven Threshold Voltage Degradation of 130 nm Technology p-Channel Transistors | Artikel Article | 2014 |
| 19 | | Entner, Robert ; Grasser, Tibor ; Triebl, Oliver ; Enichlmair, H. ; Minixhofer, R. | Negative Bias Temperature Instability Modeling for High-Voltage Oxides at Different Stress Temperatures | Artikel Article | 2007 |
| 20 | | Rott, K. ; Reisinger, H. ; Aresu, S. ; Schlünder, C. ; Kölpin, K. ; Gustin, W. ; Grasser, T. | New Insights on the PBTI Phenomena in SiON pMOSFETs | Artikel Article | 2012 |
