Institut für Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360 - Institut für Mikroelektronik
 
Code Kennzahl
E360
 
Type of Organization Organisationstyp
Institute
Parent OrgUnit Übergeordnete Organisation
 
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Results 301-320 of 2853 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
301Benam, Majid ; Wołoszyn, Maciej ; Selberherr, Siegfried Self-consistent Monte Carlo Solution of Wigner and Poisson Equations Using an Efficient Multigrid ApproachBuchbeitrag Book Contribution 2021
302Ceric, Hajdin ; Zahedmanesh, Houman ; Lacerda de Orio, Roberto ; Selberherr, Siegfried Models and Techniques for Reliability Studies of Nano-Scaled InterconnectsBuchbeitrag Book Contribution 2021
303HosseinpourRokni, Mohsen ; Naderi, Reza ; Soleimani, M. ; Jannat, A. R. ; Pourfath, M. ; Saybani, M. Using plant extracts to modify Al electrochemical behavior under corroding and functioning conditions in the air battery with alkaline-ethylene glycol electrolyteArticle Artikel 2021
304Dehdast, M. ; Valiollahi, Z. ; Neek-Amal, Mehdi ; Van Duppen, Ben ; Peeters, F.M. ; Pourfath, M. Tunable natural terahertz and mid-infrared hyperbolic plasmons in carbon phosphideArticle Artikel 2021
305Aguinsky, Luiz Felipe ; Wachter, Georg ; Manstetten, Paul ; Rodrigues, Frâncio ; Trupke, Michael ; Schmid, Ulrich ; Hössinger, Andreas ; Weinbub, Josef Modeling and Analysis of Sulfur Hexafluoride Plasma Etching for Silicon Microcavity ResonatorsArtikel Article 2021
306Schleich, Christian ; Waldhoer, Dominic ; Waschneck, Katja ; Feil, Maximilian W. ; Reisinger, Hans ; Grasser, Tibor ; Waltl, Michael Physical Modeling of Charge Trapping in 4H-SiC DMOSFET TechnologiesArtikel Article 2021
307Jørstad, Nils Petter ; Fiorentini, Simone ; Goes, Wolfgang ; Sverdlov, Viktor Efficient Finite Element Method Approach to Model Spin Orbit Torque MRAMKonferenzbeitrag Inproceedings2021
308Auzinger, Winfried ; Hofstätter, Harald ; Koch, Othmar ; Quell, Michael Adaptive Time Propagation for Time-Dependent Schrödinger EquationsArtikel Article 2021
309Milardovich, Diego ; Jech, Markus ; Waldhoer, Dominic ; El-Sayed, Al-Moatasem Bellah ; Grasser, Tibor Machine Learning Prediction of Defect Structures in Amorphous Silicon DioxideKonferenzbeitrag Inproceedings 2021
310Franco, J. ; Marneffe, J.-F. ; Vandooren, Anne ; Arimura, H ; Ragnarsson, L. A. ; Claes, Dieter ; Litta, Eugenio Dentoni ; Horiguchi, N. ; Croes, Kristof ; Linten, D ; Grasser, Tibor ; Kaczer, Ben Low Temperature Atomic Hydrogen Treatment for Superior NBTI Reliability -- Demonstration and Modeling across SiO2 IL Thicknesses from 1.8 to 0.6 nm for I/O and Core LogicKonferenzbeitrag Inproceedings 2021
311Ender, Johannes ; Orio, Roberto ; Fiorentini, Simone ; Selberherr, Siegfried ; Goes, Wolfgang ; Sverdlov, Viktor Reinforcement Learning Approach for Deterministic SOT-MRAM SwitchingKonferenzbeitrag Inproceedings2021
312Hadámek, Tomás ; Selberherr, Siegfried ; Goes, Wolfgang ; Sverdlov, Viktor Heating Asymmetry in Magnetoresistive Random Access MemoriesKonferenzbeitrag Inproceedings 2021
313Wilhelmer, Christoph ; Jech, Markus ; Waldhoer, Dominic ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Grasser, Tibor Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO<sub>2</sub> NetworkKonferenzbeitrag Inproceedings 2021
314Sverdlov, Viktor ; El-Sayed, Al-Moatasem ; Kosina, Hans ; Selberherr, Siegfried Ballistic Conductance, k. p Hamiltonian, Nanoribbons, Subbands, Topological Insulators (TIs), Topologically Protected Edge StatesKonferenzbeitrag Inproceedings 2021
315Illarionov, Yury ; Knobloch, Theresia ; Grasser, Tibor Crystalline Insulators for Scalable 2D NanoelectronicsPräsentation Presentation2021
316Cvitkovich, Lukas ; Jech, Markus ; Waldhör, Dominic ; El-Sayed, Al-Moatasem ; Wilhelmer, Christoph ; Grasser, Tibor Multiscale Modeling Study of Native Oxide Growth on a Si(100) SurfaceKonferenzbeitrag Inproceedings 2021
317Franco, J. ; Arimura, H. ; de Marneffe, J.-F. ; Vandooren, A. ; Ragnarsson, L.-A ; Wu, Z. ; Claes, D. ; Litta, E. Dentoni ; Horiguchi, N. ; Croes, K. ; Linten, D. ; Grasser, T. ; Kaczer, B. Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paperKonferenzbeitrag Inproceedings2021
318Franco, J. ; Marneffe, J.-F. ; Vandooren, Anne ; Kimura, Y ; Nyns, L ; Wu, Zhicheng ; El-Sayed, Al-Moatasem ; Jech, Markus ; Waldhör, Dominic ; Claes, Dieter ; Arimura, H ; Ragnarsson, L. A. ; Afanas´Ev, V. ; Horiguchi, N. ; Linten, D ; Grasser, Tibor ; Kaczer, Ben Atomic Hydrogen Exposure to Enable High-Quality Low-Temperature SiO<sub>2</sub> with Excellent pMOS NBTI Reliability Compatible with 3D Sequential Tier StackingKonferenzbeitrag Inproceedings 2021
319Filipovic, L. ; Selberherr, S. Gas Sensing with Two-Dimensional Materials Beyond GrapheneKonferenzbeitrag Inproceedings2021
320Grasser, T. ; O'Sullivan, B. ; Kaczer, B. ; Franco, J. ; Stampfer, B. ; Waltl, M. CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast StatesKonferenzbeitrag Inproceedings 2021