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| | Preview | Author(s) | Title | Type | Issue Date |
| 101 | | Franco, J. ; Wu, Z. ; Rzepa, G. ; Vandooren, A. ; Arimura, H. ; Claes, D. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. | Low Thermal Budget Dual-Dipole Gate Stacks Engineered for Sufficient BTI Reliability in Novel Integration Schemes | Konferenzbeitrag Inproceedings  | 2019 |
| 102 | | Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, A ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Jech, Markus ; Grasser, Tibor ; Linten, D ; Tyaginov, S. E. | Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants | Konferenzbeitrag Inproceedings | 2019 |
| 3 | | Waldhoer, D. ; Wimmer, Y. ; El-Sayed, A. M. ; Goes, W. ; Waltl, M. ; Grasser, T. | Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects | Konferenzbeitrag Inproceedings | 2019 |
| 4 | | Stampfer, B. ; Simicic, M. ; Weckx, P. ; Abbasi, A. ; Kaczer, B. ; Grasser, T. ; Waltl, M. | Statistical Characterization of BTI and RTN using Integrated pMOS Arrays | Konferenzbeitrag Inproceedings | 2019 |
| 5 | | Grasser, Tibor | CaF2 Insulators for Ultrascaled 2D Field Effect Transistors | Präsentation Presentation | 2019 |
| 6 | | Illarionov, Yury ; Banshchikov, A. G. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Vexler, M. I. ; Sokolov, N. S. ; Müller, Thomas ; Grasser, Tibor | Reliability and Thermal Stability of MoS2 FETs with Ultrathin CaF2 Insulator | Präsentation Presentation | 2019 |
| 7 | | Illarionov, Yu. Yu. ; Grasser, T. | Reliability of 2D Field-Effect Transistors: from First Prototypes to Scalable Devices | Konferenzbeitrag Inproceedings | 2019 |
| 8 | | Grasser, Tibor | CaF2 Insulators for Ultrascaled 2D Field Effect Transistors | Präsentation Presentation | 2019 |
| 9 | | Illarionov, Yury ; Banshchikov, A. G. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Vexler, M.I. ; Sokolov, N. S. ; Müller, Thomas ; Grasser, Tibor | CaF2 Insulators for Ultrascaled 2D Field Effect Transistors | Präsentation Presentation | 2019 |
| 10 | | Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A. ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. | On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI | Artikel Article | 2019 |
| 11 | | Oliva, Nicolo ; Illarionov, Yury Yu ; Casu, Emanuele A. ; Cavalieri, Matteo ; Knobloch, Theresia ; Grasser, Tibor ; Ionescu, Adrian M. | Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate Dielectric | Artikel Article | 2019 |
| 12 | | Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. | Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage Instability | Artikel Article | 2019 |
| 13 | | Filipovic, Lado ; Grasser, Tibor | Editorial for the Special Issue on Miniaturized Transistors | Artikel Article | 2019 |
| 14 | | Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. | Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques | Artikel Article | 2019 |
| 15 | | Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory | Artikel Article | 2019 |
| 16 | | Illarionov, Yury Yu. ; Banshchikov, Alexander G. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Knobloch, Theresia ; Thesberg, Mischa ; Mennel, Lukas ; Paur, Matthias ; Stöger-Pollach, Michael ; Steiger-Thirsfeld, Andreas ; Vexler, Mikhail I. ; Waltl, Michael ; Sokolov, Nikolai S. ; Mueller, Thomas ; Grasser, Tibor | Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors | Artikel Article | 2019 |
| 17 | | Makarov, Alexander ; Kaczer, Ben ; Chasin, Adrian ; Vandemaele, Michiel ; Bury, Erik ; Jech, Markus ; Grill, Alexander ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Grasser, Tibor ; Linten, Dimitri ; Tyaginov, Stanislav | Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach | Artikel Article | 2019 |
| 18 | | Makarov, Alexander ; Kaczer, Ben ; Roussel, Philippe ; Chasin, Adrian ; Grill, Alexander ; Vandemaele, Michiel ; Hellings, Geert ; El-Sayed, Al-Moatasem ; Grasser, Tibor ; Linten, Dimitri ; Tyaginov, Stanislav | Stochastic Modeling of the Impact of Random Dopants on Hot-Carrier Degradation in n-FinFETs | Artikel Article | 2019 |
| 19 | | Jech, M. ; Tyaginov, S. ; Kaczer, B. ; Franco, J. ; Jabs, D. ; Jungemann, C. ; Waltl, M. ; Grasser, T. | First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation | Konferenzbeitrag Inproceedings | 2019 |
| 20 | | Schleich, C. ; Berens, J. ; Rzepa, G. ; Pobegen, G. ; Rescher, G. ; Tyaginov, S. ; Grasser, T. ; Waltl, M. | Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs | Konferenzbeitrag Inproceedings | 2019 |
