Grasser, Tibor

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Grasser, Tibor
 
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Results 141-160 of 652 (Search time: 0.004 seconds).

PreviewAuthor(s)TitleTypeIssue Date
141Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. Comphy -- A Compact-Physics Framework for Unified Modeling of BTIArtikel Article 2018
142Tyaginov, S. E. ; Makarov, A. A. ; Jech, M. ; Vexler, M. I. ; Franco, J. ; Kaczer, B. ; Grasser, T. Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor StructuresArtikel Article 2018
143Stathis, James H. ; Mahapatra, Souvik ; Grasser, Tibor Controversial Issues in Negative Bias Temperature InstabilityArtikel Article 2018
144El-Sayed, Al-Moatasem ; Watkins, Matthew B. ; Grasser, Tibor ; Shluger, Alexander L. Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgOArtikel Article 2018
145Stampfer, Bernhard ; Zhang, Feng ; Illarionov, Yury Yuryevich ; Knobloch, Theresia ; Wu, Peng ; Waltl, Michael ; Grill, Alexander ; Appenzeller, Joerg ; Grasser, Tibor Characterization of Single Defects in Ultrascaled MoS2 Field-Effect TransistorsArtikel Article 2018
146Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M. ; Rzepa, G. ; Jech, M. ; Shluger, A.L. ; Grasser, T. Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental EvidenceArtikel Article 2018
147Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor Understanding BTI in SiC MOSFETs and Its Impact on Circuit OperationArtikel Article 2018
148Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018
149Tyaginov, S. E. ; Makarov, A. A. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETsArtikel Article 2018
150Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time ExtrapolationArtikel Article 2018
151Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovski, F. ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor A Physical Model for the Hysteresis in MoS2 TransistorsArtikel Article 2018
152Makarov, A. A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. Analysis of the Features of Hot-Carrier Degradation in FinFETsArtikel Article 2018
153Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device PreconditioningArtikel Article 2018
154Illarionov, Yury Yu ; Knobloch, Theresia ; Waltl, Michael ; Rzepa, Gerhard ; Pospischil, Andreas ; Polyushkin, Dmitry ; Furchi, Marco Mercurio ; Mueller, Thomas ; Grasser, Tibor Energetic mapping of oxide traps in MoS₂ field-effect transistorsArtikel Article Jun-2017
155Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovsky, Franz ; Jech, Markus ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor Physical modeling of the hysteresis in M0S2 transistorsKonferenzbeitrag Inproceedings 2017
156Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Polyushkin, Dmitry K. ; Pospischil, Andreas ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor Impact of Gate Dielectrics on the Threshold Voltage in MoS2 TransistorsKonferenzbeitrag Inproceedings2017
157Illarionov, Yury ; Waltl, Michael ; Smithe, Kirby K.H. ; Pop, Eric ; Grasser, Tibor Encapsulated MoS2 FETs with Improved Performance and ReliabilityKonferenzbeitrag Inproceedings 2017
158Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit OperationKonferenzbeitrag Inproceedings2017
159Grasser, Tibor Charge Trapping and Time-dependent Variability in Low-Voltage MOS TransistorsPräsentation Presentation2017
160Grasser, Tibor Defects in 3D and 2D Field Effect Transistors: Characterization and ModelingPräsentation Presentation2017