| | Preview | Author(s) | Title | Type | Issue Date |
| 141 | | Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. | Comphy -- A Compact-Physics Framework for Unified Modeling of BTI | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 142 | | Tyaginov, S. E. ; Makarov, A. A. ; Jech, M. ; Vexler, M. I. ; Franco, J. ; Kaczer, B. ; Grasser, T. | Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 143 | | Stathis, James H. ; Mahapatra, Souvik ; Grasser, Tibor | Controversial Issues in Negative Bias Temperature Instability | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 144 | | El-Sayed, Al-Moatasem ; Watkins, Matthew B. ; Grasser, Tibor ; Shluger, Alexander L. | Effect of Electric Field on Migration of Defects in Oxides: Vacancies and Interstitials in Bulk MgO | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 145 | | Stampfer, Bernhard ; Zhang, Feng ; Illarionov, Yury Yuryevich ; Knobloch, Theresia ; Wu, Peng ; Waltl, Michael ; Grill, Alexander ; Appenzeller, Joerg ; Grasser, Tibor | Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 146 | | Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M. ; Rzepa, G. ; Jech, M. ; Shluger, A.L. ; Grasser, T. | Identification of Oxide Defects in Semiconductor Devices: A Systematic Approach Linking DFT to Rate Equations and Experimental Evidence | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 147 | | Puschkarsky, Katja ; Reisinger, Hans ; Aichinger, Thomas ; Gustin, Wolfgang ; Grasser, Tibor | Understanding BTI in SiC MOSFETs and Its Impact on Circuit Operation | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 148 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement Technique | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 149 | | Tyaginov, S. E. ; Makarov, A. A. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. | Impact of the Device Geometric Parameters on Hot-Carrier Degradation in FinFETs | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 150 | | Puschkarsky, Katja ; Reisinger, Hans ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor | Voltage-Dependent Activation Energy Maps for Analytic Lifetime Modeling of NBTI Without Time Extrapolation | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 151 | | Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovski, F. ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor | A Physical Model for the Hysteresis in MoS2 Transistors | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 152 | | Makarov, A. A. ; Tyaginov, S. E. ; Kaczer, B. ; Jech, M. ; Chasin, A. ; Grill, A. ; Hellings, G. ; Vexler, M. I. ; Linten, D. ; Grasser, T. | Analysis of the Features of Hot-Carrier Degradation in FinFETs | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 153 | | Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor | Comprehensive Evaluation of Bias Temperature Instabilities on 4H-SiC MOSFETs Using Device Preconditioning | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | 2018 |
| 154 | | Illarionov, Yury Yu ; Knobloch, Theresia ; Waltl, Michael ; Rzepa, Gerhard ; Pospischil, Andreas ; Polyushkin, Dmitry ; Furchi, Marco Mercurio ; Mueller, Thomas ; Grasser, Tibor | Energetic mapping of oxide traps in MoS₂ field-effect transistors | Artikel Article ![peer reviewed](/image/PeerReview_Icon.png) | Jun-2017 |
| 155 | | Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovsky, Franz ; Jech, Markus ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor | Physical modeling of the hysteresis in M0S2 transistors | Konferenzbeitrag Inproceedings ![peer reviewed](/image/PeerReview_Icon.png) | 2017 |
| 156 | | Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Polyushkin, Dmitry K. ; Pospischil, Andreas ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor | Impact of Gate Dielectrics on the Threshold Voltage in MoS2 Transistors | Konferenzbeitrag Inproceedings | 2017 |
| 157 | | Illarionov, Yury ; Waltl, Michael ; Smithe, Kirby K.H. ; Pop, Eric ; Grasser, Tibor | Encapsulated MoS2 FETs with Improved Performance and Reliability | Konferenzbeitrag Inproceedings ![peer reviewed](/image/PeerReview_Icon.png) | 2017 |
| 158 | | Puschkarsky, Katja ; Reisinger, H. ; Aichinger, T. ; Gustin, W. ; Grasser, Tibor | Threshold Voltage Hysteresis in SiC MOSFETs and Its Impact on Circuit Operation | Konferenzbeitrag Inproceedings | 2017 |
| 159 | | Grasser, Tibor | Charge Trapping and Time-dependent Variability in Low-Voltage MOS Transistors | Präsentation Presentation | 2017 |
| 160 | | Grasser, Tibor | Defects in 3D and 2D Field Effect Transistors: Characterization and Modeling | Präsentation Presentation | 2017 |