Record link: 
http://hdl.handle.net/20.500.12708/145390
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Title: 
A Physical Model for the Hysteresis in MoS2 Transistors
en
Citation: 
Knobloch, T., Rzepa, G., Illarionov, Y., Waltl, M., Schanovski, F., Stampfer, B., Furchi, M. M., Müller, T., & Grasser, T. (2018). A Physical Model for the Hysteresis in MoS2 Transistors. IEEE Journal of the Electron Devices Society, 6, 972–978. https://doi.org/10.1109/jeds.2018.2829933
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Publisher DOI: 
10.1109/jeds.2018.2829933
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Publication Type: 
Article - Original Research Article
en
Language: 
English
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Authors: 
Knobloch, Theresia 
Rzepa, Gerhard 
Illarionov, Yury 
Waltl, Michael 
Schanovski, F. 
Stampfer, Bernhard 
Furchi, Marco Mercurio 
Müller, Thomas 
Grasser, Tibor 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
E387-01 - Forschungsbereich Photonik 
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Journal: 
IEEE Journal of the Electron Devices Society 
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ISSN: 
2168-6734
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Date (published): 
2018
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Number of Pages: 
7
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Peer reviewed: 
Yes
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Keywords: 
Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Biotechnology
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Research Areas: 
Nanoelectronics: 50%
Modelling and Simulation: 50%
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Science Branch: 
Elektrotechnik, Elektronik, Informationstechnik
Nanotechnologie
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