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| | Preview | Author(s) | Title | Type | Issue Date |
| 61 | | Waldhoer, D. ; Wimmer, Y. ; El-Sayed, A. M. ; Goes, W. ; Waltl, M. ; Grasser, T. | Minimum Energy Paths for Non-Adiabatic Charge Transitions in Oxide Defects | Konferenzbeitrag Inproceedings  | 2019 |
| 62 | | Stampfer, B. ; Simicic, M. ; Weckx, P. ; Abbasi, A. ; Kaczer, B. ; Grasser, T. ; Waltl, M. | Statistical Characterization of BTI and RTN using Integrated pMOS Arrays | Konferenzbeitrag Inproceedings | 2019 |
| 3 | | Ullmann, B. ; Puschkarsky, K. ; Waltl, M. ; Reisinger, H. ; Grasser, T. | Evaluation of Advanced MOSFET Threshold Voltage Drift Measurement Techniques | Artikel Article | 2019 |
| 4 | | Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: Theory | Artikel Article | 2019 |
| 5 | | Illarionov, Yury Yu. ; Banshchikov, Alexander G. ; Polyushkin, Dmitry K. ; Wachter, Stefan ; Knobloch, Theresia ; Thesberg, Mischa ; Mennel, Lukas ; Paur, Matthias ; Stöger-Pollach, Michael ; Steiger-Thirsfeld, Andreas ; Vexler, Mikhail I. ; Waltl, Michael ; Sokolov, Nikolai S. ; Mueller, Thomas ; Grasser, Tibor | Ultrathin Calcium Fluoride Insulators for Two-Dimensional Field-Effect Transistors | Artikel Article | 2019 |
| 6 | | Jech, M. ; Tyaginov, S. ; Kaczer, B. ; Franco, J. ; Jabs, D. ; Jungemann, C. ; Waltl, M. ; Grasser, T. | First–Principles Parameter–Free Modeling of n– and p–FET Hot–Carrier Degradation | Konferenzbeitrag Inproceedings | 2019 |
| 7 | | Schleich, C. ; Berens, J. ; Rzepa, G. ; Pobegen, G. ; Rescher, G. ; Tyaginov, S. ; Grasser, T. ; Waltl, M. | Physical Modeling of Bias Temperature Instabilities in SiC MOSFETs | Konferenzbeitrag Inproceedings | 2019 |
| 8 | | Grill, A. ; Stampfer, B. ; Im, Ki-Sik ; Lee, J.-H. ; Ostermaier, C. ; Ceric, H. ; Waltl, M. ; Grasser, T. | Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs | Artikel Article | 2019 |
| 9 | | Scharlotta, Jean-Yean ; Bersuker, Gennadi ; Tyaginov, S. E. ; Young, Chadwing ; Haase, Gaddi ; Rzepa, Gerhard ; Waltl, Michael ; Chohan, Talha ; Iyer, Subramanian ; Kotov, Alexander ; Zambelli, Cristian ; Guarin, Fernando ; Puglisi, Francesco Maria ; Ostermaier, C | IIRW 2019 Discussion Group II: Reliability for Aerospace Applications | Konferenzbeitrag Inproceedings | 2019 |
| 10 | | Illarionov, Yury Yu ; Banshchikov, Alexander G ; Polyushkin, Dmitry K ; Wachter, Stefan ; Knobloch, Theresia ; Thesberg, Mischa ; Vexler, Mikhail I ; Waltl, Michael ; Lanza, Mario ; Sokolov, Nikolai S ; Mueller, Thomas ; Grasser, Tibor | Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators | Artikel Article | 2019 |
| 11 | | Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental | Artikel Article | 2019 |
| 12 | | Shah, Ambika Prasad ; Moshrefi, Amirhossein ; Waltl, Michael | Utilizing NBTI for Operation Detection of Integrated Circuits | Buchbeitrag Book Contribution | 2019 |
| 13 | | Illarionov, Yury ; Molina- Mendoza, Aday J. ; Waltl, Michael ; Knobloch, Theresia ; Furchi, Marco Mercurio ; Mueller, T. ; Grasser, Tibor | Reliability of next-generation field-effect transistors with transition metal dichalcogenides | Konferenzbeitrag Inproceedings | 2018 |
| 14 | | Grasser, Tibor ; Stampfer, Bernhard ; Waltl, Michael ; Rzepa, Gerhard ; Rupp, Karl ; Schanovsky, Franz ; Pobegen, G. ; Puschkarsky, Katja ; Reisinger, H. ; O´Sullivan, B. J. ; Kaczer, Ben | Characterization and Physical Modeling of the Temporal Evolution of Near-Interfacial States Resulting from NBTI/PBTI Stress in nMOS/pMOS Transistors | Konferenzbeitrag Inproceedings | 2018 |
| 15 | | Illarionov, Yu.Yu. ; Smithe, K.K.H. ; Waltl, M. ; Grady, R.W. ; Deshmukh, S. ; Pop, E. ; Grasser, T. | Annealing and Encapsulation of CVD-MoS2 FETs with 10<sup>10</sup>On/Off Current Ratio | Konferenzbeitrag Inproceedings | 2018 |
| 16 | | Illarionov, Yury ; Stampfer, Bernhard ; Zhang, F ; Knobloch, Theresia ; Wu, P. ; Waltl, Michael ; Grill, Alexander ; Appenzeller, J ; Grasser, Tibor | Characterization of Single Defects: from Si to MoS2 FETs | Präsentation Presentation | 2018 |
| 17 | | Kaczer, B. ; Franco, J. ; Weckx, P. ; Roussel, Ph.J. ; Putcha, V. ; Bury, E. ; Simicic, M. ; Chasin, A. ; Linten, D. ; Parvais, B. ; Catthoor, F. ; Rzepa, G. ; Waltl, M. ; Grasser, T. | A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability | Artikel Article | 2018 |
| 18 | | Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. | Comphy -- A Compact-Physics Framework for Unified Modeling of BTI | Artikel Article | 2018 |
| 19 | | Stampfer, Bernhard ; Zhang, Feng ; Illarionov, Yury Yuryevich ; Knobloch, Theresia ; Wu, Peng ; Waltl, Michael ; Grill, Alexander ; Appenzeller, Joerg ; Grasser, Tibor | Characterization of Single Defects in Ultrascaled MoS2 Field-Effect Transistors | Artikel Article | 2018 |
| 20 | | Knobloch, Theresia ; Rzepa, Gerhard ; Illarionov, Yury ; Waltl, Michael ; Schanovski, F. ; Stampfer, Bernhard ; Furchi, Marco Mercurio ; Müller, Thomas ; Grasser, Tibor | A Physical Model for the Hysteresis in MoS2 Transistors | Artikel Article | 2018 |
