Leroch, S., Stella, R., Hössinger, A., & Filipovic, L. (2023). Molecular Dynamics Study of Al Implantation in 4H-SiC. In 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (pp. 185–188). IEEE. https://doi.org/10.23919/SISPAD57422.2023.10319554
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
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Event date:
27-Sep-2023 - 29-Sep-2023
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Event place:
Kobe, Japan
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Number of Pages:
4
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Publisher:
IEEE
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Keywords:
4H-SiC; Gao-Weber potential; Al-implantation; formation energies of Al in SiC; high-temperature implantation
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Abstract:
We have performed a molecular dynamics study of Al-implantation in 4H-SiC while investigating the types of defects produced and their quantity depending on the implantation temperature and dose. The damage to the SiC lattice should be minimized to facilitate the subsequent Al activation during annealing. Using the empirical Gao-Weber potential, together with a recently proposed Morse potential for the Al-SiC interaction, we show that implantation at elevated temperatures considerably reduces the creation of amorphous pockets and extended defect clusters. In a follow-up annealing study we aim to provide a correlation between dose/implantation temperature and the Al activation rate to give guidance for future fabrication of SiC devices.
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Project title:
Multi-Scale-Prozessmodellierung von Halbleiter-Bauelemente und -Sensoren: 00000 (Christian Doppler Forschungsgesells)
