Record link: 
http://hdl.handle.net/20.500.12708/196192
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Title: 
Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors
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Citation: 
Tselios, K., Knobloch, T., Michl, J. D., Waldhör, D., Schleich, C., Ioannidis, E., Enichlmair, H., Minixhofer, R., Grasser, T., & Waltl, M. (2022). Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors. In Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) (pp. 1–5). https://doi.org/10.1109/IIRW56459.2022.10032748
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Publisher DOI: 
10.1109/IIRW56459.2022.10032748
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Publication Type: 
Inproceedings - Full-Paper Contribution
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Language: 
English
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Authors: 
Tselios, Konstantinos 
Knobloch, Theresia 
Michl, Jakob Daniel 
Waldhör, Dominic 
Schleich, Christian 
Ioannidis , Eleftherios 
Enichlmair , Hubert 
Minixhofer , Rainer 
Grasser, Tibor 
Waltl, Michael 
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Organisational Unit: 
E360 - Institut für Mikroelektronik 
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Published in: 
Proceedings 2022 IEEE International Integrated Reliability Workshop (IIRW) 
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ISBN: 
978-1-6654-5368-4
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Date (published): 
Oct-2022
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Event name: 
2022 IEEE International Integrated Reliability Workshop (IIRW) 
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Event date: 
9-Oct-2022 - 14-Oct-2022
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Event place: 
Fallen Leaf Lake, CA, United States of America (the)
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Number of Pages: 
5
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Peer reviewed: 
Yes
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Keywords: 
Negative bias temperature instability; Silicon compounds; Thermal variables control; Current measurement; Exponential distribution; Threshold voltage; Nanoscale devices; Single defects; Charge Trapping; Positive and negative bias temperature instability (PBTI, NBTI); Complementary cumulative distribution function (CCDF); Exponential step height distribution
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Research facilities: 
Zentrum für Mikro & Nanostrukturen 
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Project title: 
CD-Labor für Einzeldefektspektroskopie in Halbleiterbauelementen: 00000000 (Christian Doppler Forschungsgesells) 
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Research Areas: 
Materials Characterization: 50%
Nanoelectronics: 50%
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Science Branch: 
2020 - Elektrotechnik, Elektronik, Informationstechnik: 100%
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Appears in Collections:
Conference Paper

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