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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Bethge, O. ; Abermann, S. ; Henkel, C. ; Smoliner, J. ; Bertagnolli, E. ; Straif, C. J. ; Hutter, H. | Atomic layer deposition temperature dependent minority carrier generation in ZrO2 /GeO2 /Ge capacitors | Artikel Article  | 2011 |
| 2 | | Roediger, Peter ; Wanzenboeck, Heinz D. ; Hochleitner, Gottfried ; Bertagnolli, Emmerich | Crystallinity-retaining removal of germanium by direct-write focused electron beam induced etching | Artikel Article | 2011 |
| 3 | | Giubertoni, D. ; Pepponi, Giancarlo ; Sahiner, M.A. ; Kelty, S.P. ; Gennaro, S. ; Bersani, M. ; Kah, M. ; Kirkby, K.J. ; Doherty, R. ; Foad, M.A. ; Meirer, F. ; Streli, Christina ; Woicik, J.C. ; Pianetta, P. | Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatment | Artikel Article | 2010 |
| 4 | | Čičo, K. ; Hušeková, K. ; Ťapajna, M. ; Gregušová, D. ; Stoklas, R. ; Kuzmík, J. ; Carlin, J.-F. ; Grandjean, N. ; Pogany, D. ; Fröhlich, K. | Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics | Artikel Article | 2011 |
| 5 | | Triendl, Fabian ; Fleckl, Gernot ; Schneider, Michael ; Pfusterschmied, Georg ; Schmid, Ulrich | Evaluation of interface trap characterization methods in 4H-SiC metal oxide semiconductor structures over a wide temperature range | Artikel Article | 2019 |
| 6 | | Waid, Simon ; Wanzenboeck, Heinz D. ; Muehlberger, Michael ; Gavagnin, Marco ; Bertagnolli, Emmerich | Focused ion beam direct patterning of hardmask layers | Artikel Article | 2014 |
| 7 | | Waid, Simon ; Wanzenboeck, Heinz D. ; Gavagnin, Marco ; Langegger, Ruppert ; Muehlberger, Michael ; Bertagnolli, Emmerich | Focused ion beam induced Ga-contamination-An obstacle for UV-nanoimprint stamp repair? | Artikel Article | 2013 |
| 8 | | Pepponi, Giancarlo ; Giubertoni, D. ; Bersani, M. ; Meirer, F. ; Ingerle, D. ; Steinhauser, Georg ; Streli, Christina ; Hoenicke, P. ; Beckhoff, B. | Grazing incidence x-ray fluorescence and secondary ion mass spectrometry combined approach for the characterization of ultrashallow arsenic distribution in silicon | Artikel Article | 2010 |
| 9 | | Langegger, Rupert ; Lugstein, Alois ; Glaser, Markus ; Bertagnolli, Emmerich ; Steiger-Thirsfeld, Andreas | High temperature focused ion beam response of graphite resulting in spontaneous nanosheet formation | Artikel Article | 2011 |
| 10 | | Starkov, I. ; Tyaginov, S. ; Enichlmair, H. ; Cervenka, J. ; Jungemann, C. ; Carniello, S. ; Park, J. M. ; Ceric, H. ; Grasser, T. | Hot-Carrier Degradation Caused Interface State Profile-Simulation versus Experiment | Artikel Article | 2011 |
| 11 | | Lutzer, Bernhard ; Bethge, Ole ; Zimmermann, Christina ; Smoliner, Jürgen ; Bertagnolli, Emmerich | In situ resistance measurements during physical vapor deposition of ultrathin metal films on Si(111) at room temperature | Artikel Article | 2017 |
| 12 | | Detz, Hermann ; Silvano de Sousa, Jonathan ; Leonhardt, Horst ; Klang, Pavel ; Zederbauer, Tobias ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Smoliner, Jürgen ; Strasser, Gottfried | InGaAs/GaAsSb based two-dimensional electron gases | Artikel Article | 2014 |
| 13 | | Detz, Hermann ; Andrews, Aaron Maxwell ; Nobile, Michele ; Klang, Pavel ; Mujagic, Elvis ; Hesser, G ; Schrenk, Werner ; Schäffler, F. ; Strasser, Gottfried | Intersubband optoelectronics in the InGaAs/GaAsSb material system | Artikel Article | 2010 |
| 14 | | Detz, Hermann ; Kriz, Martin ; Lancaster, Suzanne ; MacFarland, Donald ; Schinnerl, Markus ; Zederbauer, Tobias ; Andrews, Aaron Maxwell ; Schrenk, Werner ; Strasser, Gottfried | Lithography-free positioned GaAs nanowire growth with focused ion beam implantation of Ga | Artikel Article | 2017 |
| 15 | | Starkov, Ivan ; Enichlmair, Hubert | Local Oxide Capacitance as a Crucial Parameter for Characterization of Hot-Carrier Degradation in Long-Channel n-MOSFETs | Artikel Article | 2013 |
| 16 | | Roediger, Peter ; Mijic, Mario ; Zeiner, Clemens ; Lugstein, Alois ; Wanzenboeck, Heinz D. ; Bertagnolli, Emmerich | Local, direct-write, damage-free thinning of germanium nanowires | Artikel Article | 2011 |
| 17 | | Kaczer, B. ; Franco, J. ; Tyaginov, S. ; Jech, M. ; Rzepa, G. ; Grasser, T. ; O'Sullivan, B. J. ; Ritzenhaler, R. ; Schram, T. ; Spessot, A. ; Linten, D. ; Horiguchi, N. | Mapping of CMOS FET Degradation in Bias Space--Application to Dram Peripheral Devices | Artikel Article | 2017 |
| 18 | | Ebm, Christoph ; Hobler, Gerhard ; Waid, Simon ; Wanzenboeck, Heinz D. | Modeling of precursor coverage in ion-beam induced etching and verification with experiments using XeF2 on SiO2 | Artikel Article | 2010 |
| 19 | | Schanovsky, F. ; Gös, W. ; Grasser, T. | Multiphonon Hole Trapping from First Principles | Artikel Article | 2011 |
| 20 | | Ebm, Christoph ; Hobler, Gerhard ; Waid, Simon ; Wanzenboeck, Heinz D. | Quantitative simulation of ion-beam induced deposition of nanostructures | Artikel Article | 2011 |
