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Full name Familienname, Vorname
Waltl, Michael
 
Main Affiliation Organisations­zuordnung
 

Own Publications Eigene Publikationen

Results 1-20 of 129 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Wilhelmer, Christoph ; Waldhör, Dominic ; Milardovich, Diego ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H)Inproceedings Konferenzbeitrag20-Nov-2023
2Wilhelmer-2023-Nanomaterials-vor.pdf.jpgWilhelmer, Christoph ; Waldhör, Dominic ; Cvitkovich, Lukas ; Milardovich, Diego ; Waltl, Michael ; Grasser, Tibor Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4)Article Artikel Aug-2023
3Wilhelmer, Christoph ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂Inproceedings Konferenzbeitrag12-Jun-2023
4Wilhelmer, Christoph ; Milardovich, Diego ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Intrinsic Charge Trapping Sites in Amorphous Si₃N₄Presentation Vortrag30-May-2023
5Wilhelmer, Christoph ; Milardovich, Diego ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Charged instrinsic defect states in amorphous Si3N4Presentation Vortrag29-May-2023
6Knobloch-2022-Nature Electronics-vor.pdf.jpgKnobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury ; Wang, Zhenxing ; Otto, Martin ; Filipovic, Lado ; Waltl, Michael ; Neumaier, Daniel ; Lemme, Max Christian ; Grasser, Tibor Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuningArticle Artikel Jun-2022
7Stephanie, Margareta V. ; Waltl, Michael ; Grasser, Tibor ; Schrenk, Bernhard WDM-Conscious Synaptic Receptor Assisted by SOA+EAMKonferenzbeitrag Inproceedings 2022
8Illarionov, Yury ; Knobloch, Theresia ; Waltl, Michael ; Smets, Q ; Panarella, L ; Kaczer, Ben ; Schram, Tom ; Brems, S ; Cott, D. ; Asselberghs, Inge ; Grasser, Tibor Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETsPräsentation Presentation2022
9Wilhelmer, Christoph ; Waldhör, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Ab-Initio Study of Multi-State Defects in Amorphous SiO2Konferenzbeitrag Inproceedings2022
10Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 InsulatorsKonferenzbeitrag Inproceedings2022
11Jech, M. ; Grasser, T. ; Waltl, M. The Importance of Secondary Generated Carriers in Modeling of Full Bias SpaceKonferenzbeitrag Inproceedings 2022
12Waltl, Michael Editorial for the Special Issue on Robust Microelectronic DevicesArtikel Article2022
13Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology?Artikel Article 2022
14Wilhelmer, Christoph ; Waldhoer, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole captureArtikel Article 2022
15Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja ; Stampfer, Bernhard ; Reisinger, Hans ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsArtikel Article 2022
16Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja Anna ; Stampfer, Bernhard ; Reisinger, H. ; Grasser, Tibor Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping ModelsBuchbeitrag Book Contribution 2022
17Waltl-2021-Microelectronics Reliability-vor.pdf.jpgWaltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor Impact of single-defects on the variability of CMOS inverter circuitsArticle Artikel Nov-2021
18Hernandez, Yoanlys ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor TechnologiesArtikel Article 2021
19Michl, Jakob ; Grill, Alexander ; Waldhör, Dominic ; Schleich, Christian ; Knobloch, Theresia ; Ioannidis, E. ; Enichlmair, H. ; Minixhofer, R. ; Kaczer, Ben ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, I ; Grasser, Tibor ; Waltl, Michael Evidence of Tunneling Driven Random Telegraph Noise in Cryo-CMOSKonferenzbeitrag Inproceedings 2021
20Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021

Contributing Publications Mitbeteiligte Publikationen

Results 1-11 of 11 (Search time: 0.001 seconds).

PreviewAuthors / EditorsTitleTypeIssue Date
1Waltl, Michael Robust Microelectronic DevicesBuch Book2022
2Michl Jakob Daniel - 2022 - Charge trapping and variability in CMOS technologies...pdf.jpgMichl, Jakob Daniel Charge trapping and variability in CMOS technologies at cryogenic temperaturesThesis Hochschulschrift 2022
3Schleich Christian - 2022 - Modeling of defect related reliability phenomena in...pdf.jpgSchleich, Christian Modeling of defect related reliability phenomena in SiC power-MOSFETsThesis Hochschulschrift 2022
4Kratzmann Matthias - 2021 - Development of a low-noise CV measurement module for...pdf.jpgKratzmann, Matthias Development of a low-noise CV measurement module for defect-spectroscopy of MOS transistorsThesis Hochschulschrift 2021
5Stampfer Bernhard - 2020 - Advanced electrical characterization of charge...pdf.jpgStampfer, Bernhard Advanced electrical characterization of charge trapping in MOS transistorsThesis Hochschulschrift 2020
6Schleich, Christian Charakterisierung und Modellierung von SiC TransistorenThesis Hochschulschrift2019
7Fleischanderl, Patrick Charakterisierung von Hot Carrier Degradation in SiliziumtransistorenThesis Hochschulschrift2018
8Rzepa Gerhard - 2018 - Efficient physical modeling of bias temperature...pdf.jpgRzepa, Gerhard Efficient physical modeling of bias temperature instabilityThesis Hochschulschrift 2018
9Ullmann Bianka - 2018 - Mixed negative bias temperature instability and...pdf.jpgUllmann, Bianka Mixed negative bias temperature instability and hot-carrier stressThesis Hochschulschrift 2018
10Illarionov Yury - 2016 - Characterization and modeling of charged defects in...pdf.jpgIllarionov, Yury Characterization and modeling of charged defects in silicon and 2D field-effect transistorsThesis Hochschulschrift 2016
11Huymajer Marco - 2016 - Cluster detection algorithm to study single charge...pdf.jpgHuymajer, Marco Cluster detection algorithm to study single charge trapping events in TDDSThesis Hochschulschrift 2016