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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Müller, Thomas | 2D materials optoelectronics | Konferenzbeitrag Inproceedings | 2016 |
| 2 | | Khalil, N. ; Nanz, Gerd ; Rios, R. ; Selberherr, Siegfried | A B-Splines Regression Technique to Determine One-Dimensional MOS Doping Profiles | Konferenzbeitrag Inproceedings | 1995 |
| 3 | | Sharma, Prateek ; Tyaginov, Stanislav ; Rauch, Stewart E. ; Franco, Jacopo ; Kaczer, Ben ; Makarov, Alexander ; Vexler, Mikhail I. ; Grasser, Tibor | A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs | Konferenzbeitrag Inproceedings  | 2016 |
| 4 | | Fasching, F. ; Fischer, C. ; Halama, S. ; Pimingstorfer, H. ; Read, H. ; Selberherr, S. ; Stippel, H. ; Tuppa, W. ; Verhas, P. ; Wimmer, K. | A new open technology CAD system | Konferenzbeitrag Inproceedings | 1991 |
| 5 | | Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried | A Stochastic Model of Bipolar Resistive Switching in Metal-Oxide-Based Memory | Konferenzbeitrag Inproceedings | 2010 |
| 6 | | Heinreichsberger, Otto ; Habaš, Predrag ; Selberherr, Siegfried | Analysis of geometric charge-pumping components in a thin-film SOI device | Konferenzbeitrag Inproceedings | 1992 |
| 7 | | Kuzmik, Jan ; Blaho, M. ; Pogany, Dionyz ; Gornik, Erich ; Alam, A ; Dikme, Y ; Heuken, M ; Javorka, P ; Marso, M ; Kordos, P | Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates | Konferenzbeitrag Inproceedings | 2003 |
| 8 | | Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Reisinger, H. ; Grasser, Tibor | Comparison of Fast Measurement Methods for Short-Term Negative Bias Temperature Stress and Relaxation | Konferenzbeitrag Inproceedings | 2009 |
| 9 | | Capriotti, M ; Fleury, Clement ; Bethge, Ole ; Rigato, Matteo ; Lancaster, Suzanne ; Pogany, Dionyz ; Strasser, Gottfried | E-mode AlGaN/GaN True-MOS, with High-k ZrO2 Gate Insulator | Konferenzbeitrag Inproceedings | 2015 |
| 10 | | Sverdlov, Viktor ; Ungersböck, Stephan Enzo ; Kosina, Hans ; Selberherr, Siegfried | Effects of Shear Strain on the Conduction Band in Silicon: An Efficient Two-Band k.p Theory | Konferenzbeitrag Inproceedings | 2007 |
| 11 | | Trommer, Jens ; Simon, Maik ; Slesazeck, Stefan ; Weber, Walter M. ; Mikolajick, Thomas | Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent Inputs | Konferenzbeitrag Inproceedings | 2019 |
| 12 | | Gerrer, Louis ; Hussin, Razaidi ; Amoroso, Salvatore M. ; Franco, J. ; Weckx, P. ; Simicic, M. ; Horiguchi, N. ; Kaczer, Ben ; Grasser, T. ; Asenov, Asen | Experimental evidences and simulations of trap generation along a percolation path | Konferenzbeitrag Inproceedings | 2015 |
| 13 | | Puschkarsky, Katja ; Reisinger, H. ; Schlünder, C. ; Gustin, W. ; Grasser, Tibor | Fast Acquisition of Activation Energy Maps Using Temperature Ramps for Lifetime Modeling of BTI | Konferenzbeitrag Inproceedings | 2018 |
| 14 | | Kostov, Plamen ; Gaberl, Wolfgang ; Zimmermann, Horst | High-speed PNP PIN Phototransistors in a 0.18 μ CMOS Process | Konferenzbeitrag Inproceedings | 2011 |
| 15 | | Vitanov, Stanislav ; Palankovski, Vassil ; Selberherr, Siegfried | Hydrodynamic Models for GaN-Based HEMTs | Konferenzbeitrag Inproceedings | 2010 |
| 16 | | Henkel, Christoph ; Hellström, Per-Erik ; Östling, Mikael ; Bethge, Ole ; Stöger-Pollach, Michael ; Bertagnolli, Emmerich | Impact of Oxidation and Reduction Annealing on the Electrical Properties of Ge/La2O3/ZrO2 Gate Stacks | Konferenzbeitrag Inproceedings | 2011 |
| 17 | | Tyaginov, S. E. ; Starkov, Ivan ; Jungemann, C. ; Enichlmair, H. ; Park, Jong Mun ; Grasser, Tibor | Impact of the Carrier Distribution Function on Hot-Carrier Degradation Modeling | Konferenzbeitrag Inproceedings | 2011 |
| 18 | | Pourfath, Mahdi ; Kosina, Hans ; Cheong, Byoung-Ho ; Park, W.J. ; Selberherr, Siegfried | Improving DC and AC Characteristics of Ohmic Contact Carbon Nanotube Field Effect Transistors | Konferenzbeitrag Inproceedings | 2005 |
| 19 | | Illarionov, Yury ; Waltl, Michael ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Lemme, Max ; Grasser, Tibor | Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors | Konferenzbeitrag Inproceedings | 2015 |
| 20 | | Kolodinski, S. ; Mart, C. ; Weinreich, W ; Sessi, Violetta ; Trommer, Jens ; Chohan, Talha ; Mulaosmanovic, Halid ; Weber, Walter M. ; Slesazeck, Stefan ; Peng, B ; Esposito, C ; Zimmermann, Y ; Schröter, M ; Xu, X. ; Testa, P.V. ; Carta, C ; Ellinger, F ; Lehmann, S ; Drescher, Markus ; Wiatr, M | IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF | Konferenzbeitrag Inproceedings | 2019 |
