IEEE Transactions on Electron Devices

View Statistics Email Alert RSS Feed

Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

Filter:
Author:  Grasser, T.
Date Issued:  [2010 TO 2019]

Results 1-20 of 22 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
1Vasicek, Martin ; Cervenka, Johann ; Esseni, David ; Palestri, Pierpaolo ; Grasser, Tibor Applicability of Macroscopic Transport Models to Decananometer MOSFETsArtikel Article2012
2Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTsArtikel Article 2017
3Puschkarsky, Katja ; Reisinger, Hans ; Rott, Gunnar Andreas ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy MapsArtikel Article 2019
4Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
5Illarionov, Yury ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Mueller, Thomas ; Lemme, Max ; Grasser, Tibor Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and DifferencesArtikel Article2015
6Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: ExperimentalArtikel Article 2019
7Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: TheoryArtikel Article 2019
8Sharma, Prateek ; Tyaginov, S. E. ; Wimmer, Yannick ; Rudolf, Florian ; Rupp, Karl ; Bina, Markus ; Enichlmair, H. ; Park, J.M. ; Minixhofer, R. ; Ceric, Hajdin ; Grasser, Tibor Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport EquationArtikel Article 2015
9Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level ModelingArtikel Article 2019
10Grasser, Tibor ; Rott, Karina ; Reisinger, Hans ; Waltl, Michael ; Schanovsky, Franz ; Kaczer, Ben NBTI in Nanoscale MOSFETs-The Ultimate Modeling BenchmarkArtikel Article2014
11Berens, Judith ; Pobegen, Gregor ; Rescher, Gerald ; Aichinger, Thomas ; Grasser, Tibor NH₃ and NO + NH₃ Annealing of 4H-SiC Trench MOSFETs: Device Performance and ReliabilityArtikel Article 2019
12Pobegen, Gregor ; Grasser, Tibor On the Distribution of NBTI Time Constants on a Long, Temperature-Accelerated Time ScaleArtikel Article2013
13Grasser, Tibor ; Kaczer, Ben ; Gös, Wolfgang ; Reisinger, H. ; Aichinger, T. ; Hehenberger, Philipp Paul ; Wagner, Paul-Jürgen ; Schanovsky, Franz ; Franco, J. ; Toledano-Luque, M. ; Nelhiebel, M. The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide TrapsArtikel Article 2011
14Rescher, Gerald ; Pobegen, Gregor ; Aichinger, Thomas ; Grasser, Tibor Preconditioned BTI on 4H-SiC: Proposal for a Nearly Delay Time-Independent Measurement TechniqueArtikel Article 2018
15Bina, Markus ; Tyaginov, Stanislav ; Franco, Jacopo ; Rupp, Karl ; Wimmer, Yannick ; Osintsev, Dmitry ; Kaczer, Ben ; Grasser, Tibor Predictive Hot-Carrier Modeling of n-Channel MOSFETsArtikel Article2014
16Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
17Franco, Jacopo ; Kaczer, Ben ; Toledano-Luque, María ; Roussel, Philippe J. ; Kauerauf, Thomas ; Mitard, Jérôme ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultra-Thin EOT Devices-Part II: Time-Dependent Variability in Nanoscaled Devices and Other Reliability IssuesArtikel Article2013
18Franco, Jacopo ; Kaczer, Ben ; Roussel, Philippe J. ; Mitard, Jérôme ; Cho, Moonju ; Witters, Liesbeth ; Grasser, Tibor ; Groeseneken, Guido SiGe Channel Technology: Superior Reliability Toward Ultrathin EOT Devices-Part I: NBTIArtikel Article2013
19Toifl, Alexander ; Simonka, Vito ; Hössinger, Andreas ; Selberherr, Siegfried ; Grasser, Tibor ; Weinbub, Josef Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET CharacteristicsArtikel Article Jul-2019
20Waltl, M. ; Rzepa, G. ; Grill, A. ; Goes, W. ; Franco, J. ; Kaczer, B. ; Witters, L. ; Mitard, J. ; Horiguchi, N. ; Grasser, T. Superior NBTI in High-k SiGe Transistors - Part I: ExperimentalArtikel Article 2017