IEEE Transactions on Electron Devices

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Journal description

Title Titel
IEEE Transactions on Electron Devices
 
e-ISSN
1557-9646
 
ISSN
0018-9383
 
Publisher Herausgeber
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
 
Publisher's Address Herausgeber Adresse
445 HOES LANE, PISCATAWAY, USA, NJ, 08855-4141
 
Listed in SCI Aufgelistet im SCI
 
Peer reviewed Begutachtet
 
 

Publications Publikationen

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Date Issued:  [2000 TO 2024]
Subject:  Electronic, Optical and Magnetic Materials

Results 21-40 of 72 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
21Michl, Jakob ; Grill, Alexander ; Waldhoer, Dominic ; Goes, Wolfgang ; Kaczer, Ben ; Linten, Dimitri ; Parvais, Bertrand ; Govoreanu, Bogdan ; Radu, Iuliana ; Grasser, Tibor ; Waltl, Michael Efficient Modeling of Charge Trapping at Cryogenic Temperatures-Part II: ExperimentalArtikel Article 2021
22Dhar, Siddhartha ; Kosina, Hans ; Palankovski, Vassil ; Ungersböck, Stephan Enzo ; Selberherr, Siegfried Electron Mobility Model for Strained-Si DevicesArtikel Article 2005
23Simonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon CarbideArtikel Article 4-Jan-2018
24Grasser, Tibor ; Kaczer, Ben Evidence That Two Tightly Coupled Mechanisms Are Responsible for Negative Bias Temperature Instability in Oxynitride MOSFETsArtikel Article2009
25Illarionov, Yury ; Bina, Markus ; Tyaginov, Stanislav ; Rott, Karina ; Kaczer, Ben ; Reisinger, Hans ; Grasser, Tibor Extraction of the Lateral Position of Border Traps in Nanoscale MOSFETsArtikel Article2015
26Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Nishi, Kenji ; Ranaweera, Jeewika ; Selberherr, Siegfried Foreword Special Issue on Characterization of Nano CMOS Variability by Simulation and MeasurementsArtikel Article2011
27Sangiorgi, Enrico ; Asenov, Asen ; Bennett, Herbert S. ; Dutton, Robert W. ; Esseni, David ; Giles, Martin D. ; Hane, Masami ; Jungemann, Christoph ; Nishi, Kenji ; Selberherr, Siegfried ; Takagi, Shinichi Foreword Special Issue on Simulation and Modeling of Nanoelectronics DevicesArtikel Article2007
28Henkel, C. ; Abermann, S. ; Bethge, O. ; Pozzovivo, G. ; Klang, P. ; Reiche, M. ; Bertagnolli, E. Ge p-MOSFETs With Scaled ALD 𝙻𝚊₂𝙾₃/𝚉𝚛𝙾₂ Gate DielectricsArtikel Article Dec-2010
29Lorenz, J. ; Bär, E. ; Clees, T. ; Jancke, Roland ; Salzig, C. ; Selberherr, Siegfried Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: MethodologyArtikel Article 16-Jun-2011
30Lorenz, J. ; Bär, E. ; Clees, T. ; Evanschitzky, P. ; Jancke, Roland ; Kampen, C. ; Paschen, U. ; Salzig, C. ; Selberherr, Siegfried Hierarchical Simulation of Process Variations and Their Impact on Circuits and Systems: ResultsArtikel Article 16-Jun-2011
31Schmid, U. ; Sheppard, S.T. ; Wondrak, W. High Temperature Performance of NMOS Integrated Inverters and Ring Oscillators in 6HSiCArtikel Article2000
32Dhar, Siddhartha ; Kosina, Hans ; Karlowatz, Gerhard ; Ungersboeck, Stephan Enzo ; Grasser, Tibor ; Selberherr, Siegfried High-Field Electron Mobility Model for Strained-Silicon DevicesArtikel Article2006
33Illarionov, Yury ; Smith, Anderson ; Vaziri, Sam ; Ostling, Mikael ; Mueller, Thomas ; Lemme, Max ; Grasser, Tibor Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and DifferencesArtikel Article2015
34Tapajna, Milan ; Killat, Nicole ; Palankovski, Vassil ; Gregusova, Dagmar ; Cico, Karol ; Carlin, Jean-Francois ; Grandjean, Nicolas ; Kuball, Martin ; Kuzmik, Jan Hot-Electron-Related Degradation in InAlN/GaN High-Electron-Mobility TransistorsArtikel Article 2014
35Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: ExperimentalArtikel Article 2019
36Jech, Markus ; Ullmann, Bianka ; Rzepa, Gerhard ; Tyaginov, Stanislav ; Grill, Alexander ; Waltl, Michael ; Jabs, Dominic ; Jungemann, Christoph ; Grasser, Tibor Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part II: TheoryArtikel Article 2019
37Wang, L. ; Brown, A.R. ; Nedjalkov, Mihail ; Alexander, Craig ; Cheng, B. ; Millar, C. ; Asenov, A Impact of Self-Heating on the Statistical Variability in Bulk and SOI FinFETsArtikel Article 2015
38Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge PumpingArtikel Article 2020
39Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Localizing Hot-Carrier Degradation in Silicon Trench MOSFETsArtikel Article 2021
40Pogany, D. ; Johnsson, D. ; Bychikhin, S. ; Esmark, K. ; Rodin, P. ; Stecher, M. ; Gornik, E. ; Gossner, H. Measuring Holding Voltage Related to Homogeneous Current Flow in Wide ESD Protection Structures Using Multilevel TLPArtikel Article2011