| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Stampfer, Bernhard ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors | Article Artikel | Sep-2023 |
| 2 | | Mounir, Ahmed ; Iniguez, Benjamin ; Lime, Francois ; Kloes, Alexander ; Knobloch, Theresia ; Grasser, Tibor | Compact I-V Model for back-gated and double-gated TMD FETs | Article Artikel | Sep-2023 |
| 3 | | Ravichandran, Harikrishnan ; Knobloch, Theresia ; Pannone, Andrew ; Karl, Alexander ; Stampfer, Bernhard ; Waldhör, Dominic ; Zheng, Yikai ; Sakib, Najam ; Karim Sadaf, Muhatsim ; Pendurthi, Rahul ; Torsi, Riccardo ; Robinson, Joshua A. ; Grasser, Tibor ; Das, Saptarshi | Observation of Rich Defect Dynamics in Monolayer MoS₂ | Article Artikel | 25-Jul-2023 |
| 4 | | Knobloch, Theresia ; Grasser, Tibor | Gate Stack Design for Field-Effect Transistors Based on Two-Dimensional Materials | Inproceedings Konferenzbeitrag | 28-May-2023 |
| 5 | | Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor | High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits | Inproceedings Konferenzbeitrag | 28-May-2023 |
| 6 | | Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor | High-Performance Field-Effect Transistors Based on Two-Dimensional Materials for VLSI Circuits | Article Artikel | 19-May-2023 |
| 7 | | Tselios, Konstantinos ; Knobloch, Theresia ; Michl, Jakob Daniel ; Waldhör, Dominic ; Schleich, Christian ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors | Inproceedings Konferenzbeitrag | Oct-2022 |
| 8 | | Knobloch, Theresia ; Grasser, Tibor | Scalable and Reliable Gate Insulators for 2D Material-Based FETs | Präsentation Presentation | 4-Jul-2022 |
| 9 | | Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury ; Wang, Zhenxing ; Otto, Martin ; Filipovic, Lado ; Waltl, Michael ; Neumaier, Daniel ; Lemme, Max Christian ; Grasser, Tibor | Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning | Article Artikel | Jun-2022 |
| 10 | | Illarionov, Yury Yu. ; Knobloch, Theresia ; Grasser, Tibor | Inorganic Molecular Crystals for 2D Electronics | Artikel Article | 2022 |
| 11 | | Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor | Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? | Artikel Article | 2022 |
| 12 | | Ducry, Fabian ; Waldhoer, Dominic ; Knobloch, Theresia ; Csontos, Miklos ; Jimenez Olalla, Nadia ; Leuthold, Juerg ; Grasser, Tibor ; Luisier, Mathieu | An Ab Initio Study on Resistance Switching in Hexagonal Boron Nitride | Artikel Article | 2022 |
| 13 | | Knobloch, Theresia ; Selberherr, Siegfried ; Grasser, Tibor | Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials | Artikel Article | 2022 |
| 14 | | Knobloch, Theresia ; Illarionov, Yury Yu. ; Grasser, Tibor | Finding Suitable Gate Insulators for Reliable 2D FETs | Konferenzbeitrag Inproceedings | 2022 |
| 15 | | Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor | CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators | Konferenzbeitrag Inproceedings | 2022 |
| 16 | | Illarionov, Yury ; Knobloch, Theresia ; Uzlu, B. ; Sokolov, N. S. ; Lemme, Max C ; Grasser, Tibor | Highly stable GFETs with 2nm crystalline CaF2 insulators | Präsentation Presentation | 2022 |
| 17 | | Illarionov, Yury ; Knobloch, Theresia ; Waltl, Michael ; Smets, Q ; Panarella, L ; Kaczer, Ben ; Schram, Tom ; Brems, S ; Cott, D. ; Asselberghs, Inge ; Grasser, Tibor | Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs | Präsentation Presentation | 2022 |
| 18 | | Knobloch, Theresia ; Illarionov, Yury ; Grasser, Tibor | Enhancing the Stability of 2D Material-Based Transistors via Fermi-Level Tuning | Konferenzbeitrag Inproceedings | 2022 |
| 19 | | Illarionov, Y.Y. ; Knobloch, T. ; Grasser, T. | Crystalline Insulators for Scalable 2D Nanoelectronics | Artikel Article | 2021 |
| 20 | | Wen, Chao ; Illarionov, Yury ; Frammelsberger, Werner ; Knobloch, Theresia ; Grasser, Tibor ; Lanza, Mario | Outstanding Dielectric Properties of Ultra-thin CaF2 Dielectric Films | Konferenzbeitrag Inproceedings | 2021 |