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| | Preview | Author(s) | Title | Type | Issue Date |
| 1 | | Wilhelmer, Christoph ; Waldhör, Dominic ; Milardovich, Diego ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Intrinsic Electron Trapping in Amorphous Silicon Nitride (a-Si3N4:H) | Inproceedings Konferenzbeitrag | 20-Nov-2023 |
| 2 | | Tselios, Konstantinos ; Knobloch, Theresia ; Waldhör, Dominic ; Stampfer, Bernhard ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO₂ Transistors | Article Artikel  | Sep-2023 |
| 3 |  | Wilhelmer, Christoph ; Waldhör, Dominic ; Cvitkovich, Lukas ; Milardovich, Diego ; Waltl, Michael ; Grasser, Tibor | Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4) | Article Artikel   | Aug-2023 |
| 4 | | Wilhelmer, Christoph ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Ab initio investigations of electron and hole trapping processes of H induced defects in amorphous SiO₂ | Inproceedings Konferenzbeitrag | 12-Jun-2023 |
| 5 | | Wilhelmer, Christoph ; Milardovich, Diego ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Intrinsic Charge Trapping Sites in Amorphous Si₃N₄ | Presentation Vortrag | 30-May-2023 |
| 6 | | Wilhelmer, Christoph ; Milardovich, Diego ; Waldhör, Dominic ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Charged instrinsic defect states in amorphous Si3N4 | Presentation Vortrag | 29-May-2023 |
| 7 | | Tselios, Konstantinos ; Knobloch, Theresia ; Michl, Jakob Daniel ; Waldhör, Dominic ; Schleich, Christian ; Ioannidis , Eleftherios ; Enichlmair , Hubert ; Minixhofer , Rainer ; Grasser, Tibor ; Waltl, Michael | Impact of Single Defects on NBTI and PBTI Recovery in SiO₂ Transistors | Inproceedings Konferenzbeitrag | Oct-2022 |
| 8 |  | Knobloch, Theresia ; Uzlu, Burkay ; Illarionov, Yury ; Wang, Zhenxing ; Otto, Martin ; Filipovic, Lado ; Waltl, Michael ; Neumaier, Daniel ; Lemme, Max Christian ; Grasser, Tibor | Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning | Article Artikel | Jun-2022 |
| 9 | | Jech, M. ; Grasser, T. ; Waltl, M. | The Importance of Secondary Generated Carriers in Modeling of Full Bias Space | Konferenzbeitrag Inproceedings | 2022 |
| 10 | | Waltl, Michael ; Knobloch, Theresia ; Tselios, Konstantinos ; Filipovic, Lado ; Stampfer, Bernhard ; Hernandez, Yoanlys ; Waldhör, Dominic ; Illarionov, Yury ; Kaczer, Ben ; Grasser, Tibor | Perspective of 2D Integrated Electronic Circuits: Scientific Pipe Dream or Disruptive Technology? | Artikel Article | 2022 |
| 11 | | Wilhelmer, Christoph ; Waldhoer, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture | Artikel Article | 2022 |
| 12 | | Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja ; Stampfer, Bernhard ; Reisinger, Hans ; Grasser, Tibor | Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models | Artikel Article | 2022 |
| 13 | | Waltl, Michael ; Hernandez, Yoanlys ; Schleich, Christian ; Waschneck, Katja Anna ; Stampfer, Bernhard ; Reisinger, H. ; Grasser, Tibor | Performance Analysis of 4H-SiC Pseudo-D CMOS Inverter Circuits Employing Physical Charge Trapping Models | Buchbeitrag Book Contribution | 2022 |
| 14 | | Wilhelmer, Christoph ; Waldhör, Dominic ; Jech, Markus ; El-Sayed, Al-Moatasem ; Cvitkovich, Lukas ; Waltl, Michael ; Grasser, Tibor | Ab-Initio Study of Multi-State Defects in Amorphous SiO2 | Konferenzbeitrag Inproceedings | 2022 |
| 15 | | Illarionov, Yury ; Uzlu, B. ; Knobloch, Theresia ; Banshchikov, A. G. ; Sverdlov, Viktor ; Vexler, M.I. ; Sokolov, N. S. ; Waltl, Michael ; Wang, Z. ; Neumaier, Daniel ; Lemme, M.C. ; Grasser, Tibor | CVD-GFETs with Record-small Hysteresis Owing to 2nm Epitaxial CaF2 Insulators | Konferenzbeitrag Inproceedings | 2022 |
| 16 | | Stephanie, Margareta V. ; Waltl, Michael ; Grasser, Tibor ; Schrenk, Bernhard | WDM-Conscious Synaptic Receptor Assisted by SOA+EAM | Konferenzbeitrag Inproceedings | 2022 |
| 17 | | Illarionov, Yury ; Knobloch, Theresia ; Waltl, Michael ; Smets, Q ; Panarella, L ; Kaczer, Ben ; Schram, Tom ; Brems, S ; Cott, D. ; Asselberghs, Inge ; Grasser, Tibor | Top Gate Length Dependence of Hysteresis in 300mm FAB MoS2 FETs | Präsentation Presentation | 2022 |
| 18 |  | Waltl, Michael ; Waldhör, Dominic ; Tselios, Konstantinos ; Stampfer, Bernhard ; Schleich, Christian ; Rzepa, Gerhard ; Enichlmair, Hubert ; Ioannidis, Eleftherios G. ; Minixhofer, Rainer ; Grasser, Tibor | Impact of single-defects on the variability of CMOS inverter circuits | Article Artikel | Nov-2021 |
| 19 | | Hernandez, Yoanlys ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael | Impact of Bias Temperature Instabilities on the Performance of Logic Inverter Circuits Using Different SiC Transistor Technologies | Artikel Article | 2021 |
| 20 | | Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael | On the Distribution of Single Defect Threshold Voltage Shifts in SiON Transistors | Artikel Article | 2021 |
