Institut für Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360 - Institut für Mikroelektronik
 
Code Kennzahl
E360
 
Type of Organization Organisationstyp
Institute
Parent OrgUnit Übergeordnete Organisation
 
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Results 81-100 of 715 (Search time: 0.002 seconds).

PreviewAuthor(s)TitleTypeIssue Date
81Mills, Richard T. ; Adams, Mark ; Balay, Satish ; Brown, Jed ; Dener, Alp ; Knepley, Matthew ; Kruger, Scott ; Morgan, Hannah ; Munson, Todd ; Rupp, Karl ; Smith, Barry ; Zampini, Stefano ; Zhang, H ; Zhang, J. Toward Performance-Portable PETSc for GPU-based Exascale SystemsArtikel Article 2021
82Illarionov, Y.Y. ; Knobloch, T. ; Grasser, T. Crystalline Insulators for Scalable 2D NanoelectronicsArtikel Article 2021
83Kosik, Robert ; Cervenka, Johann ; Kosina, Hans Numerical Constraints and Non‑Spatial Open Boundary Conditions for the Wigner EquationArtikel Article 2021
84Cervenka, Johann ; Kosik, Robert ; Nedjalkov, Mihail A Deterministic Wigner Approach for Superposed StatesArtikel Article 2021
85Feil, M. W. ; Puschkarsky, K. ; Gustin, W. ; Reisinger, H. ; Grasser, T. On the Physical Meaning of Single-Value Activation Energies for BTI in Si and SiC MOSFET DevicesArtikel Article 2021
86Tselios, Konstantinos ; Waldhör, Dominic ; Stampfer, Bernhard ; Michl, Jakob ; Ioannidis, Eleftherios ; Enichlmair, H. ; Grasser, Tibor ; Waltl, Michael On the Distribution of Single Defect Threshold Voltage Shifts in SiON TransistorsArtikel Article 2021
87de Orio, R.L. ; Ender, J. ; Fiorentini, S. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. Two-Pulse Switching Scheme and Reinforcement Learning for Energy Efficient SOT-MRAM SimulationsArtikel Article 2021
88Fiorentini, S. ; Ender, J. ; Selberherr, S. ; de Orio, R.L. ; Goes, W. ; Sverdlov, V. Coupled Spin and Charge Drift-Diffusion Approach Applied to Magnetic Tunnel JunctionsArtikel Article 2021
89Klemenschits, Xaver ; Selberherr, Siegfried ; Filipovic, Lado Geometric Advection and Its Application in the Emulation of High Aspect Ratio StructuresArtikel Article 2021
90Waldhoer, Dominic ; Schleich, Christian ; Michl, Jakob ; Stampfer, Bernhard ; Tselios, Konstantinos ; Ioannidis, Eleftherios G. ; Enichlmair, Hubert ; Waltl, Michael ; Grasser, Tibor Toward Automated Defect Extraction From Bias Temperature Instability MeasurementsArtikel Article 2021
91Jech, Markus ; El-Sayed, Al-Moatasem ; Tyaginov, Stanislav ; Waldhör, Dominic ; Bouakline, Foudhil ; Saalfrank, Peter ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor DevicesArtikel Article 2021
92Filipovic, Lado Theoretical Examination of Thermo-Migration in Novel Platinum MicroheatersArtikel Article 2021
93Sverdlov, Viktor ; El-Sayed, Al-Moatasem Bellah ; Seiler, Heribert ; Kosina, Hans ; Selberherr, Siegfried Subbands in a Nanoribbon of Topologically Insulating MoS₂ in the 1T′ PhaseArtikel Article 2021
94Benam, Majid ; Ballicchia, Mauro ; Weinbub, Josef ; Selberherr, Siegfried ; Nedjalkov, Mihail A Computational Approach for Investigating Coulomb Interaction Using Wigner-Poisson CouplingArtikel Article 2021
95Filipovic, Lado ; Selberherr, Siegfried Microstructure and Granularity Effects in ElectromigrationArtikel Article 2021
96Ceric, H. ; Selberherr, S. ; Zahedmanesh, H. ; de Orio, R. L. ; Croes, K. Review - Modeling Methods for Analysis of Electromigration Degradation in Nano-InterconnectsArtikel Article 2021
97Knobloch, Theresia ; Illarionov, Yury Yu. ; Ducry, Fabian ; Schleich, Christian ; Wachter, Stefan ; Watanabe, Kenji ; Taniguchi, Takashi ; Mueller, Thomas ; Waltl, Michael ; Lanza, Mario ; Vexler, Mikhail I. ; Luisier, Mathieu ; Grasser, Tibor The Performance Limits of Hexagonal Boron Nitride as an Insulator for Scaled CMOS Devices Based on Two-Dimensional MaterialsArtikel Article 2021
98Saleh, Ahmed ; Ceric, Hajdin ; Zahedmanesh, Houman Void-Dynamics in Nano-Wires and the Role of Microstructure Investigated via a Multi-Scale Physics-Based ModelArtikel Article 2021
99de Orio, R. L. ; Ender, J. ; Fiorentini, S. ; Goes, W. ; Selberherr, S. ; Sverdlov, V. Numerical Analysis of Deterministic Switching of a Perpendicularly Magnetized Spin-Orbit Torque Memory CellArtikel Article 2021
100Das, S. ; Sebastian, Amritanand ; Pop, Eric ; McClellan, Connor J. ; Franklin, Aaron D. ; Grasser, Tibor ; Knobloch, Theresia ; Illarionov, Yury ; Penumatcha, Ashish V. ; Appenzeller, J ; Chen, Zhihong ; Zhu, Wenjuan ; Asselbberghs, Inge ; Li, Lain-Jong ; Avci, Uygar E. ; Bhat, Navakanta ; Anthopoulos, Thomas D. ; Singh, Rajendra Transistors based on two-dimensional materials for future integrated circuitsArtikel Article 2021