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| | Preview | Author(s) | Title | Type | Issue Date |
| 241 | | Foster, Samuel ; Thesberg, Mischa ; Neophytou, Neophytos | Thermoelectric Power Factor of Nanocomposite Materials from Two-Dimensional Quantum Transport Simulations | Artikel Article  | 2017 |
| 242 | | Manstetten, Paul ; Weinbub, Josef ; Hössinger, Andreas ; Selberherr, Siegfried | Using Temporary Explicit Meshes for Direct Flux Calculation on Implicit Surfaces | Artikel Article | 2017 |
| 243 | | Manstetten, Paul ; Filipovic, Lado ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried | Framework to Model Neutral Particle Flux in Convex High Aspect Ratio Structures using One-Dimensional Radiosity | Artikel Article | 2017 |
| 244 | | Šimonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried | ReaxFF Reactive Molecular Dynamics Study of Orientation Dependence of Initial Silicon Carbide Oxidation | Artikel Article | 2017 |
| 245 | | Šimonka, Vito ; Nawratil, Georg ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried | Anisotropic Interpolation Method of Silicon Carbide Oxidation Growth Rates for Three-Dimensional Simulation | Artikel Article | 2017 |
| 246 | | Stradiotto, Roberta ; Pobegen, Gregor ; Ostermaier, Clemens ; Waltl, Michael ; Grill, Alexander ; Grasser, Tibor | Characterization of Interface Defects With Distributed Activation Energies in GaN-Based MIS-HEMTs | Artikel Article | 2017 |
| 247 | | Ostermaier, C. ; Lagger, P. ; Prechtl, G. ; Grill, A. ; Grasser, T. ; Pogany, D. | Dynamics of Carrier Transport via AlGaN Barrier in AlGaN/GaN MIS-HEMTs | Artikel Article | 2017 |
| 248 |  | Rupp, Karl ; Jungemann, C. ; Hong, S.-M. ; Bina, Markus ; Grasser, Tibor ; Jüngel, Ansgar | A review of recent advances in the spherical harmonics expansion method for semiconductor device simulation | Article Artikel   | Sep-2016 |
| 249 | | Illarionov, Yury Yu ; Rzepa, Gerhard ; Waltl, Michael ; Knobloch, Theresia ; Grill, Alexander ; Furchi, Marco Mercurio ; Mueller, Thomas ; Grasser, Tibor | The role of charge trapping in Mo₂/SiO₂ and MoS₂/hBN field-effect transistors | Artikel Article | Sep-2016 |
| 250 | | Glaser, Markus ; Kitzler, Andreas ; Johannes, A. ; Prucnal, Slawomir ; Potts, Heidi ; Conesa-Boj, Sonia ; Filipovic, Lidija ; Kosina, Hans ; Skorupa, Wolfgang ; Bertagnolli, Emmerich ; Ronning, C ; Fontcuberta i Morral, Anna ; Lugstein, Alois | Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures | Artikel Article | 8-Jun-2016 |
| 251 | | Wimmer, Yannick ; El-Sayed, Al-Moatasem ; Gös, Wolfgang ; Grasser, Tibor ; Shluger, Alexander L. | Role of hydrogen in volatile behaviour of defects in SiO₂-based electronic devices | Artikel Article | Jun-2016 |
| 252 | | Rescher, Gerald ; Pobegen, Gregor ; Grasser, Tibor | Threshold Voltage Instabilities of Present SiC-Power MOSFETs Under Positive Bias Temperature Stress | Artikel Article | 2016 |
| 253 | | Reiche, Manfred ; Kittler, Martin ; Pippel, Eckhard ; Kosina, Hans ; Lugstein, Alois ; Uebensee, Hartmut | Electronic Properties of Dislocations | Artikel Article | 2016 |
| 254 | | Ghosh, Joydeep ; Osintsev, Dmitry ; Sverdlov, V. ; Selberherr, Siegfried | Enhancement of Electron Spin Relaxation Time in Thin SOI Films by Spin Injection Orientation and Uniaxial Stress | Artikel Article | 2016 |
| 255 | | Zeraati, Majid ; Vaez Allaei, S. Mehdi ; Abdolhosseini Sarsari, I. ; Pourfath, Mahdi ; Donadio, Davide | Highly Anisotropic Thermal Conductivity of Arsenene: An Ab Initio Study | Artikel Article | 2016 |
| 256 | | Tyaginov, Stanislav ; Jech, Markus ; Franco, Jacopo ; Sharma, Prateek ; Kaczer, Ben ; Grasser, Tibor | Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON n-MOSFETs | Artikel Article | 2016 |
| 257 | | Jech, Markus ; Sharma, Prateek ; Tyaginov, Stanislav ; Rudolf, Florian ; Grasser, Tibor | On the Limits of Applicability of Drift-Diffusion Based Hot Carrier Degradation Modeling | Artikel Article | 2016 |
| 258 | | Nazemi, Sanaz ; Pourfath, Mahdi ; Soleimani, Ebrahim Asl ; Kosina, Hans | The Effect of Oxide Shell Thickness on the Structural, Electronic, and Optical Properties of Si-SiO₂ Core-Shell Nano-Crystals: A (Time Dependent)Density Functional Theory Study | Artikel Article | 2016 |
| 259 | | Illarionov, Yury Yu. ; Waltl, Michael ; Smith, Anderson D. ; Vaziri, Sam ; Ostling, Mikael ; Lemme, Max C. ; Grasser, Tibor | Bias-Temperature Instability on the Back Gate of Single-Layer Double-Gated Graphene Field-Effect Transistors | Artikel Article | 2016 |
| 260 | | Rupp, Karl ; Tillet, Philippe ; Rudolf, Florian ; Weinbub, Josef ; Morhammer, Andreas ; Grasser, Tibor ; Jüngel, Ansgar ; Selberherr, Siegfried | ViennaCL---Linear Algebra Library for Multi- and Many-Core Architectures | Artikel Article | 2016 |
