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| | Preview | Author(s) | Title | Type | Issue Date |
| 181 | | Grill, A. ; Stampfer, B. ; Im, Ki-Sik ; Lee, J.-H. ; Ostermaier, C. ; Ceric, H. ; Waltl, M. ; Grasser, T. | Electrostatic Coupling and Identification of Single-Defects in GaN/AlGaN Fin-MIS-HEMTs | Artikel Article  | 2019 |
| 182 | | Illarionov, Yury Yu ; Banshchikov, Alexander G ; Polyushkin, Dmitry K ; Wachter, Stefan ; Knobloch, Theresia ; Thesberg, Mischa ; Vexler, Mikhail I ; Waltl, Michael ; Lanza, Mario ; Sokolov, Nikolai S ; Mueller, Thomas ; Grasser, Tibor | Reliability of Scalable MoS2 FETs With 2 nm Crystalline CaF2 Insulators | Artikel Article | 2019 |
| 183 | | Ullmann, Bianka ; Jech, Markus ; Puschkarsky, Katja ; Rott, Gunnar Andreas ; Waltl, Michael ; Illarionov, Yury ; Reisinger, Hans ; Grasser, Tibor | Impact of Mixed Negative Bias Temperature Instability and Hot Carrier Stress on MOSFET Characteristics-Part I: Experimental | Artikel Article | 2019 |
| 184 | | Giering, K.-U. ; Puschkarsky, K. ; Reisinger, H. ; Rzepa, G. ; Rott, G. ; Vollertsen, R. ; Grasser, T. ; Jancke, R. | NBTI Degradation and Recovery in Analog Circuits: Accurate and Efficient Circuit-Level Modeling | Artikel Article | 2019 |
| 185 | | Berens, Judith ; Pobegen, Gregor ; Eichinger, Thomas ; Rescher, Gerald ; Grasser, Tibor | Cryogenic Characterization of NH₃ Post Oxidation Annealed 4H-SiC Trench MOSFETs | Artikel Article | 2019 |
| 186 | | Woerle, Judith ; Šimonka, Vito ; Müller, Elisabeth ; Hössinger, Andreas ; Sigg, Hans ; Selberherr, Siegfried ; Weinbub, Josef ; Camarda, Massimo ; Grossner, Ulrike | Surface Morphology of 4H-SiC After Thermal Oxidation | Artikel Article | 2019 |
| 187 | | Sadi, Toufik ; Medina-Bailon, Christina ; Nedjalkov, Mihail ; Lee, Jaehyun ; Badami, Oves ; Berrada, Salim ; Carillo-Nunez, Hamilton ; Georgiev, Vihar ; Selberherr, Siegfried ; Asenov, Asen | Simulation of the Impact of Ionized Impurity Scattering on the Total Mobility in Si Nanowire Transistors | Artikel Article | 2019 |
| 188 | | Puschkarsky, Katja ; Reisinger, Hans ; Rott, Gunnar Andreas ; Schlünder, Christian ; Gustin, Wolfgang ; Grasser, Tibor | An Efficient Analog Compact NBTI Model for Stress and Recovery Based on Activation Energy Maps | Artikel Article | 2019 |
| 189 | | Jing, Xu ; Illarionov, Yury ; Yalon, Eilam ; Zhou, Peng ; Grasser, Tibor ; Shi, Yuanyuan ; Lanza, Mario | Engineering Field Effect Transistors with 2D Semiconducting Channels: Status and Prospects | Artikel Article | 2019 |
| 190 | | Kittler, Martin ; Reiche, Manfred ; Schwartz, Bernhard ; Uebensee, Hartmut ; Kosina, Hans ; Stanojevic, Zlatan ; Baumgartner, Oskar ; Ortlepp, Thomas | Transport of Charge Carriers along Dislocations in Si and Ge | Artikel Article | 2019 |
| 191 | | Ruch, Bernhard ; Pobegen, Gregor ; Rösch, Maximilian ; Vytla, Rajeev Krishna ; Grasser, Tibor | Charge Pumping of Low-Voltage Silicon Trench Powers MOSFETs | Artikel Article | 2019 |
| 192 |  | Gnam, Lukas ; Manstetten, Paul ; Hössinger, Andreas ; Selberherr, Siegfried ; Weinbub, Josef | Accelerating Flux Calculations Using Sparse Sampling | Article Artikel   | Nov-2018 |
| 193 | | Strand, Jack ; Moloud, Kaviani ; Gao, David ; El-Sayed, Al-Moatasem Bellah ; Afanas´Ev, V. ; Shluger, A.L. | Intrinsic Charge Trapping in Amorphous Oxide Films: Status and Challenges | Artikel Article | 15-May-2018 |
| 194 |  | Pakdel, Sahar ; Pourfath, Mahdi ; Palacios, J. J. | An implementation of spin-orbit coupling for band structure calculations with Gaussian basis sets: Two-dimensional topological crystals of Sb and Bi | Article Artikel | 28-Mar-2018 |
| 195 | | Simonka, Vito ; Hössinger, Andreas ; Weinbub, Josef ; Selberherr, Siegfried | Empirical Model for Electrical Activation of Aluminum- and Boron-Implanted Silicon Carbide | Artikel Article | 4-Jan-2018 |
| 196 |  | Filipovic, Lado ; Lahlalia, Ayoub | Review—System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology | Article Artikel | Jan-2018 |
| 197 |  | Kampl, Markus ; Kosina, Hans | The Backward Monte Carlo Method for Semiconductor Device Simulation | Article Artikel | 2018 |
| 198 | | Kaczer, B. ; Franco, J. ; Weckx, P. ; Roussel, Ph.J. ; Putcha, V. ; Bury, E. ; Simicic, M. ; Chasin, A. ; Linten, D. ; Parvais, B. ; Catthoor, F. ; Rzepa, G. ; Waltl, M. ; Grasser, T. | A Brief Overview of Gate Oxide Defect Properties and Their Relation to MOSFET Instabilities and Device and Circuit Time-Dependent Variability | Artikel Article | 2018 |
| 19 | | Rzepa, G. ; Franco, J. ; O’Sullivan, B. ; Subirats, A. ; Simicic, M. ; Hellings, G. ; Weckx, P. ; Jech, M. ; Knobloch, T. ; Waltl, M. ; Roussel, P.J. ; Linten, D. ; Kaczer, B. ; Grasser, T. | Comphy -- A Compact-Physics Framework for Unified Modeling of BTI | Artikel Article | 2018 |
| 20 | | Tyaginov, S. E. ; Makarov, A. A. ; Jech, M. ; Vexler, M. I. ; Franco, J. ; Kaczer, B. ; Grasser, T. | Physical Principles of Self-Consistent Simulation of the Generation of Interface States and the Transport of Hot Charge Carriers in Field-Effect Transistors Based on Metal-Oxide-Semiconductor Structures | Artikel Article | 2018 |
