Institut für Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360 - Institut für Mikroelektronik
 
Code Kennzahl
E360
 
Type of Organization Organisationstyp
Institute
Parent OrgUnit Übergeordnete Organisation
 
Active Aktiv
 

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Results 141-160 of 715 (Search time: 0.006 seconds).

PreviewAuthor(s)TitleTypeIssue Date
141Khan, Sajid ; Shah, Ambika Prasad ; Chouhan, Shailesh Singh ; Gupta, Neha ; Pandey, Jai Gopal ; Vishvakarma, Santosh Kumar A Symmetric D Flip-Flop Based PUF with Improved UniquenessArtikel Article 2020
142Waltl, Michael Ultra-Low Noise Defect Probing Instrument for Defect Spectroscopy of MOS TransistorsArtikel Article 2020
143de Orio, R.L. ; Makarov, A. ; Selberherr, S. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V. Robust Magnetic Field-Free Switching of a Perpendicularly Magnetized Free Layer for SOT-MRAMArtikel Article 2020
144Fiorentini, S. ; de Orio, R. L. ; Selberherr, S. ; Ender, J. ; Goes, W. ; Sverdlov, V. Analysis of Switching Under Fixed Voltage and Fixed Current in Perpendicular STT-MRAMArtikel Article 2020
145Sverdlov, V. ; El-Sayed, E. A.-M. ; Kosina, H. ; Selberherr, S. Ballistic Conductance in a Topological 1T '-MoS₂ NanoribbonArtikel Article 2020
146Feil, Maximilian ; Huerner, Andreas ; Puschkarsky, Katja ; Schleich, Christian ; Eichinger, Thomas ; Gustin, W. ; Reisinger, H. ; Grasser, Tibor The Impact of Interfacial Charge Trapping on the Reproducibility of Measurements of Silicon Carbide MOSFET Device ParametersArtikel Article 2020
147Waltl, Michael ; Stampfer, Bernhard ; Rzepa, Gerhard ; Kaczer, Ben ; Grasser, Tibor Separation of Electron and Hole Trapping Components of PBTI in SiON nMOS TransistorsArtikel Article 2020
148Ruch, Bernhard ; Pobegen, Gregor ; Grasser, Tibor Investigation of the Temperature Dependence of Hot-Carrier Degradation in Si MOSFETs Using Spectroscopic Charge PumpingArtikel Article 2020
149Khakbaz, Pedram ; Moshayedi, Milad ; Hajian, Sajjad ; Soleimani, Maryam ; Narakathu, Binu Baby ; Bazuin, Bradley ; Pourfath, Mahdi ; Atashbar, Massood Titanium Carbide MXene as NH₃ Sensor: Realistic First-Principles StudyArticle Artikel 12-Dec-2019
150Jech, Markus ; El-Sayed, Al-Moatasem Bellah ; Tyaginov, Stanislav ; Shluger, Alexander L. ; Grasser, Tibor Ab Initio treatment of silicon-hydrogen bond rupture at Si/SiO₂ interfacesArtikel Article 15-Nov-2019
151Medina-Bailon, Christina ; Sadi, Toufik ; Nedjalkov, Mihail ; Carrillo-Nuñez, Hamilton ; Lee, Jaehyun ; Badami, Oves ; Georgiev, Vihar ; Selberherr, Siegfried ; Asenov, Asen Mobility of Circular and Elliptical Si Nanowire Transistors Using a Multi-Subband 1D FormalismArtikel Article Oct-2019
152Toifl, Alexander ; Simonka, Vito ; Hössinger, Andreas ; Selberherr, Siegfried ; Grasser, Tibor ; Weinbub, Josef Simulation of the Effects of Postimplantation Annealing on Silicon Carbide DMOSFET CharacteristicsArtikel Article Jul-2019
153Wu, Zhicheng ; Franco, Jacopo ; Vandooren, Anne ; Kaczer, Ben ; Roussel, Philippe ; Rzepa, Gerhard ; Grasser, Tibor ; Linten, Dimitri ; Groeseneken, Guido Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential IntegrationArtikel Article Jun-2019
154Boroun, Mohammad ; Abdolhosseini, Saeed ; Pourfath, Mahdi Separated and intermixed phases of borophene as anode material for lithium-Ion batteriesArticle Artikel 15-Apr-2019
155Franco, J. ; Wu, Z. ; Rzepa, G. ; Ragnarsson, L.-A. ; Dekkers, H. ; Vandooren, A. ; Groeseneken, G. ; Horiguchi, N. ; Collaert, N. ; Linten, D. ; Grasser, T. ; Kaczer, B. On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTIArtikel Article 2019
156Oliva, Nicolo ; Illarionov, Yury Yu ; Casu, Emanuele A. ; Cavalieri, Matteo ; Knobloch, Theresia ; Grasser, Tibor ; Ionescu, Adrian M. Hysteresis Dynamics in Double-Gated n-Type WSe₂ FETs With High-k Top Gate DielectricArtikel Article 2019
157Puschkarsky, K. ; Grasser, T. ; Aichinger, T. ; Gustin, W. ; Reisinger, H. Review on SiC MOSFETs High-Voltage Device Reliability Focusing on Threshold Voltage InstabilityArtikel Article 2019
158Ceric, H. ; Zahedmanesh, H. ; Croes, K. Analysis of Electromigration Failure of Nano-Interconnects through a Combination of Modeling and Experimental MethodsArtikel Article 2019
159Khan, Sajid ; Shah, Ambika Prasad ; Gupta, Neha ; Chouhan, Shailesh Singh ; Pandey, Jai Gopal ; Vishvakarma, Santosh Kumar An Ultra-Low Power, Reconfigurable, Aging Resilient RO PUF for IoT ApplicationsArtikel Article 2019
160Sanvale, Prachi ; Gupta, Neha ; Neema, Vaibhav ; Shah, Ambika Prasad ; Vishvakarma, Santosh Kumar An Improved Read-Assist Energy Efficient Single Ended P-P-N Based 10T SRAM Cell for Wireless Sensor NetworArtikel Article 2019