Institut für Mikroelektronik

Organization Name (de) Name der Organisation (de)
E360 - Institut für Mikroelektronik
 
Code Kennzahl
E360
 
Type of Organization Organisationstyp
Institute
Parent OrgUnit Übergeordnete Organisation
 
Active Aktiv
 

SubOrgUnits

Results 1-2 of 2 (Search time: 0.001 seconds).



Results 121-140 of 715 (Search time: 0.003 seconds).

PreviewAuthor(s)TitleTypeIssue Date
121Soleimani, Maryam ; Pourfath, Mahdi Ferroelectricity and phase transitions in In₂Se₃ van der Waals materialArticle Artikel 19-Nov-2020
122Ghamari, Shima ; Dehdast, Mahyar ; Habibiyan, Hamidrerza ; Pourfath, Mahdi ; Ghafoorifard, Hassan Dielectrophoretic borophene tweezer: Sub-10 mV nano-particle trappingArticle Artikel 15-Oct-2020
123Jech, Markus ; Rott, Gunnar ; Reisinger, Hans ; Tyaginov, Stanislav ; Rzepa, Gerhard ; Grill, Alexander ; Jabs, Dominic ; Jungemann, Christoph ; Waltl, Michael ; Grasser, Tibor Mixed Hot-Carrier/Bias Temperature Instability Degradation Regimes in Full {VG, VD} Bias Space: Implications and PeculiaritiesArtikel Article Aug-2020
124Berens, Judith Veronika ; Pobegen, Gregor ; Grasser, Tibor Tunneling Effects in NH₃ Annealed 4H-SiC Trench MOSFETsArtikel Article Jul-2020
125Toifl, Alexander ; Quell, Michael ; Klemenschits, Xaver ; Manstetten, Paul ; Hössinger, Andreas ; Selberherr, Siegfried ; Weinbub, Josef The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective EpitaxyArtikel Article 22-Jun-2020
126Stampfer, Bernhard ; Schanovsky, Franz ; Grasser, Tibor ; Waltl, Michael Semi-Automated Extraction of the Distribution of Single Defects for nMOS TransistorsArtikel Article 23-Apr-2020
127Honari, Najmeh ; Tabatabaei, Seyed Mohammad ; Pourfath, Mahdi ; Fathipour, Morteza Semiconducting Phase and Anisotropic Properties in Borophene via Chemical Surface FunctionalizationArticle Artikel 12-Mar-2020
128Anzt, Hartwig ; Boman, Erik ; Falgout, Rob ; Ghysels, Pieter ; Heroux, Michael ; Li, Xiaoye ; McInnes, Lois Curfman ; Mills, Richard Tran ; Rajamanickam, Sivasankaran ; Rupp, Karl ; Smith, Barry ; Yamazaki, Ichitaro ; Meier Yang, Ulrike Preparing sparse solvers for exascale computingArtikel Article 6-Mar-2020
129Sverdlov, Viktor ; El-Sayed, Al-Moatasem Bellah ; Kosina, Hans ; Selberherr, Siegfried Conductance in a Nanoribbon of Topologically Insulating MoS₂ in the 1T' PhaseArtikel Article 2020
130Shah, Ambika Prasad ; Rossi, Daniele ; Sharma, Vishal ; Vishvakarma, Santosh Kumar ; Waltl, Michael Soft Error Hardening Enhancement Analysis of NBTI Tolerant Schmitt Trigger CircuitArtikel Article 2020
131Stampfer, Bernhard ; Simicic, Marko ; Weckx, Pieter ; Abbasi, Arash ; Kaczer, Ben ; Grasser, Tibor ; Waltl, Michael Extraction of Statistical Gate Oxide Parameters From Large MOSFET ArraysArtikel Article 2020
132Makarov, Alexander ; Roussel, Philippe ; Bury, Erik ; Vandemaele, Michiel ; Spessot, Alessio ; Linten, Dimitri ; Kaczer, Ben ; Tyaginov, Stanislav Correlated Time-0 and Hot-Carrier Stress Induced FinFET Parameter Variabilities: Modeling ApproachArtikel Article 2020
133Illarionov, Yury Yu. ; Knobloch, Theresia ; Jech, Markus ; Lanza, Mario ; Akinwande, Deji ; Vexler, Mikhail I. ; Mueller, Thomas ; Lemme, Max C. ; Fiori, Gianluca ; Schwierz, Frank ; Grasser, Tibor Insulators for 2D Nanoelectronics: The Gap to BridgeArtikel Article 2020
134Waltl, Michael Reliability of Miniaturized Transistors from the Perspective of Single-DefectsArtikel Article 2020
135Ferry, David K. ; Nedjalkov, Mihail ; Weinbub, Josef ; Ballicchia, Mauro ; Welland, Ian ; Selberherr, Siegfried Complex Systems in Phase SpaceArtikel Article 2020
136Wen, Chao ; Banshchikov, A. G. ; Illarionov, Yury ; Frammelsberger, Werner ; Knobloch, Theresia ; Hui, Fei ; Sokolov, N. S. ; Grasser, Tibor ; Lanza, Mario Dielectric Properties of Ultrathin CaF₂ Ionic CrystalsArtikel Article 2020
137Illarionov, Yury Yu. ; Knobloch, Theresia ; Grasser, Tibor Native High-k Oxides for 2D TransistorsArtikel Article 2020
138Shah, Ambika Prasad ; Waltl, Michael Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAMArtikel Article 2020
139de Orio, R.L. ; Makarov, A. ; Goes, W. ; Ender, J. ; Fiorentini, S. ; Sverdlov, V. Two-Pulse Magnetic Field-Free Switching Scheme for Perpendicular SOT-MRAM with a Symmetric Square Free LayerArtikel Article 2020
140Raut, Gopal ; Shah, Ambika Prasad ; Sharma, Vishal ; Rajput, Gunjan ; Vishvakarma, Santosh Kumar A 2.4-GS/s Power-Efficient, High-Resolution Reconfigurable Dynamic Comparator for ADC ArchitectureArtikel Article 2020